- •Contents
- •List of Tables
- •List of Figures
- •Preface
- •About this document
- •Feedback
- •Introduction
- •1.1 About the ARM PrimeCell MultiPort Memory Controller (PL172)
- •1.2 Supported dynamic memory devices
- •1.3 Supported static memory devices
- •Functional Overview
- •2.1 PrimeCell MPMC functional description
- •2.2 Overview of a PrimeCell MPMC, ASIC, or ASSP system
- •2.3 Low power operation
- •2.4 Lock and semaphores
- •2.5 Arbitration
- •2.6 Memory bank select
- •2.7 Memory map
- •Programmer’s Model
- •3.1 About the programmer’s model
- •3.2 Register descriptions
- •Programmer’s Model for Test
- •4.1 PrimeCell MPMC test harness overview
- •4.2 Scan testing
- •4.3 Test registers
- •Static Memory Controller
- •5.1 Static memory device selection
- •5.2 Write-protection
- •5.3 Extended wait transfers
- •5.4 Memory mapped peripherals
- •5.5 Static memory initialization
- •5.6 Byte lane control
- •5.7 Byte lane control and databus steering for little and big-endian configurations
- •Dynamic Memory Controller
- •6.1 Write-protection
- •6.2 Access sequencing and memory width
- •6.3 Address mapping
- •6.4 Dynamic memory controller command descriptions
- •6.5 Generic SDRAM initialization example
- •6.6 Micron MT48LC4M16A2 SDRAM initialization example
- •6.8 Micron MT28F4M16S2 SyncFlash initialization example
- •6.9 Micron SyncFlash commands
- •Common Memory Transactions
- •7.1 Static and dynamic memory transaction latency
- •Test Interface Controller
- •8.1 About TIC
- •8.2 Sequence of events leading to entry into TIC test mode
- •System Connectivity
- •9.2 Self-refresh entry
- •9.3 Example system
- •Off-chip Connectivity
- •10.2 Pin count reduction by reducing databus width
- •10.3 Pin count reduction by removing functionality
- •10.4 Address pin reduction
- •10.5 Chip select pin reduction
- •10.6 Device support
- •10.7 Multiplexing static and dynamic memory pins
- •10.8 Reducing pin count by multiplexing MPMC pins
- •10.9 About MPMC timing
- •10.10 On-chip timing path
- •10.11 Off-chip timing path
- •10.12 Clock strategy
- •10.13 Clock ratios
- •10.14 Memory clock and fed-back clock strategy
- •Pad Interface Timing
- •A.1 Overview
- •A.2 Signal delay
- •A.3 Method to reduce delay
- •A.4 Methods to reduce skew
- •A.5 Methods to minimize the effects of delay and skew
- •A.6 Example SDRAM memory timing diagram
- •A.7 SDRAM memory timing paths
- •Troubleshooting
- •B.1 Troubleshooting
- •C.1 AHB register signals
- •C.2 AHB memory signals
- •C.3 Miscellaneous and clock signals
- •C.4 Pad interface and control signals
- •C.5 Test Interface Controller (TIC) signals
- •C.6 Scan test signals
Off-chip Connectivity
10.4Address pin reduction
Depending on the size of the memory parts, not all the address pins have to be bonded out.
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Copyright © 2002 ARM Limited. All rights reserved. |
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Off-chip Connectivity
10.5Chip select pin reduction
Depending on the number of memory chip selects required, not all of the chips selects have to bonded out.
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Copyright © 2002 ARM Limited. All rights reserved. |
ARM DDI 0215A |
Off-chip Connectivity
10.6Device support
If the Micron SyncFlash devices are not required to be supported the nMPMCRPOUT pin is not required.
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Copyright © 2002 ARM Limited. All rights reserved. |
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Off-chip Connectivity
10.7Multiplexing static and dynamic memory pins
SDRAM memories use a multiplexed address. These devices use up to 15 address pins.
Static memories do not perform address multiplexing and so require more address pins.
For systems where the SDRAM memory chip selects databus is wider than the static memory chip selects databus. The upper static memory address bits can be multiplexed with the upper bits of the SDRAM databus to reduce the pin count.
For example, in a system where the static memory devices use a 16-bit databus and 24 address pins, and the SDRAM memory devices use a 32-bit databus and 15 address pins. The static memory controller uses more address pins than the dynamic memory controller, the dynamic memory controller uses more data pins than the static memory controller. As only one transaction can be active at a time. It is possible to multiplex the top 8-bits of the SDRAM data pins with the top 8-bits of the static memory address pins. This can be performed by ORing the relevant MPMCADDROUT and MPMCDATAOUT signals externally.
Note
If the above optimization is to be performed then appropriate testing is required. This ensures that the pads are driven in the correct direction for static and dynamic memory accesses.
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Copyright © 2002 ARM Limited. All rights reserved. |
ARM DDI 0215A |