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94 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ȝȓȞȓțȜȟȐȘȞȖȟȠȎșșȓJ= D¸ Y(ȑȒȓY_ µ – ȑȞȎȒȖȓțȠȘȜțȤȓțȠȞȎȤȖȖ ȐȎȘȎțȟȖȗ(ȖșȖȎȠȜȚȜȐ) ȟȜȜȠȐȓȠȟȠȐȡȬȧȖȗȒȎțțȜȚȡȑȞȎȒȖȓțȠȡȣȖȚȖȥȓȟȘȜȑȜ ȝȜȠȓțȤȖȎșȎ). ȁȟȠȎțȎȐșȖȐȎȬȧȓȓȟȭ Ȑ ȞȓȕȡșȪȠȎȠȓ ȚȎȟȟȜȝȓȞȓțȜȟȎ țȓȞȎȐțȜȚȓȞțȜȓ ȞȎȟȝȞȓȒȓșȓțȖȓ șȓȑȖȞȡȬȧȖȣ ȝȞȖȚȓȟȓȗ ȏȡȒȓȠ ȠȎȘȔȓ ȟȠȖȚȡșȖȞȜȐȎȠȪ țȓȟȠȎȏȖșȪțȜȟȠȪ ȝȜșȖȠȖȝȎ Ȑ ȞȎȟȠȡȧȓȚ ȘȞȖȟȠȎșșȓ.

ǽȞȜȤȓȟȟȢȜȞȚȖȞȜȐȎțȖȭȠȓȞȚȜțȎȝȞȭȔȓțȖȗȐȞȎȟȠȡȧȓȚȘȞȖȟȠȎșșȓȘȎȞȏȖȒȎȘȞȓȚțȖȭȜȟȜȏȓțțȜȥȡȐȟȠȐȖȠȓșȓțȘȐȓșȖȥȖțȓȞȎȒȖȎșȪțȜȑȜ ȑȞȎȒȖȓțȠȎ ȠȓȚȝȓȞȎȠȡȞȩ Ȑ ȘȞȖȟȠȎșșȓ. ǿȒȐȖȑȜȐȜȓ țȎȝȞȭȔȓțȖȓ țȓ ȏȡȒȓȠ ȝȞȓȐȩȦȎȠȪ ȘȞȖȠȖȥȓȟȘȡȬ ȐȓșȖȥȖțȡ U-106 ǽȎ, ȜȏȓȟȝȓȥȖȐȎȭ țȓȜȏȣȜȒȖȚȜȓ ȘȎȥȓȟȠȐȜ ȘȞȖȟȠȎșșȎ ȓȟșȖ, Ȑ ȠȓȥȓțȖȓ ȐȟȓȑȜ ȝȞȜȤȓȟȟȎ ȞȜȟȠȎ, ȞȎȒȖȎșȪțȩȗ ȑȞȎȒȖȓțȠ ȠȓȚȝȓȞȎȠȡȞȩ țȓ ȏȡȒȓȠ ȝȞȓȐȩȦȎȠȪ ȐȓșȖȥȖțȡ 2 K/ȟȚ.

ȅȎȟȠȪ I, DZșȎȐȎ 4

95

 

 

ǹȖȠȓȞȎȠȡȞȎ

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ǿ. 91–97.

7.Ghoshtagore R.N., Coble R.L. Sels-diffusion in silicon carbide // Phys. Rev. – 1966. – 143, N2. – P. 623–626.

8.ǹȬȏȜȐ ǯ.ȍ. ȀȓȜȞȖȭ ȘȞȖȟȠȎșșȖȕȎȤȖȖ Ȑ ȏȜșȪȦȖȣ ȜȏȨȓȚȎȣ. – Ǻ.:

ǻȎȡȘȎ, 1975. – 256 ȟ.

9.ǽȖțȓȟ ǯ.ȍ., DZȓȑȡȕȖț ȍ.dz. ǿȎȚȜȒȖȢȢȡȕȖȭ Ȗ ȑȓȠȓȞȜȒȖȢȢȡȕȖȭ Ȑ țȓȜȒțȜȞȜȒțȩȣ ȝȜȞȖȟȠȩȣ ȠȓșȎȣ // ǴȀȂ. – 1953. – 23, Ɋ9. –

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10.Van Der Hoek B., Van Der Eerden J.P., Bennema P. Thermodynamical stability condition for occurrrence of hollow cores caused by stress of line and planar defects // J. Cryst. Growth. – 1982. – 56, N3. – P. 621–632.

96 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

11.Van Der Hoek B., Van Der Eerden J.P., Bennema P., Sunagawa I. The inÁuence of stress on spiral growth // J.Cryst. Growth. – 1982. – 58, N2. – P. 365.

12.Cherednichenko D.I., Khlebnikov Y.I., Khlebnikov I.I., Drachev R.V., Sudarshan T.S. Dislocations as a source of micropipe development in the growth of silicon carbide // J. Appl. Phys. – 2001. – 89, N7. – P. 4139–4142.

13.ȂȞȓțȘȓșȪ ȍ.Ƕ. ǰȐȓȒȓțȖȓ Ȑ ȠȓȜȞȖȬ ȚȓȠȎșșȜȐ. – ǹ.: ǻȎȡȘȎ ǹǼ, 1972. – 424 ȟ.

14.ǯȡȞȦȠȓȗț Ǯ.Ƕ. ǺȜșȓȘȡșȭȞțȎȭ ȢȖȕȖȘȎ – ǻȜȐȜȟȖȏȖȞȟȘ: ǻȎȡȘȎ ǿǼ, 1972. – 2. – 201 ȟ.

15.Lilov S.K., Yanchev I.Y. Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer // Adv. Mat. for Opt. and Electron. – 1992. – 1, N4. – P. 203–207.

16.Heindl J., Dorsch W., Strunk H.P., Muller St.G., Eckstein R., Hofmann D., Winnacker A. Dislocation content of micropipes in SiC // Phys. Rev. Lett. – 1998. – 80, N4. – P. 740–741.

17.Maximenko S. Soloviev S. Cherednichenko D., Sudarshan T.S., Electron-beam-Induced current observed for dislocations in diffused 4H-SiC- p-n diode // Appl. Phys. Lett. – 2004. – 84, N9. – P. 1576–1578.

18.Cherednichenko D.I., Drachev R.V., Sudarshan T.S. Self-congru- ent process of SiC growth by physical vapor transport // J.Cryst. Growth. – 2004. – 262, N1–4. – P. 175–181.

19.Cherednichenko D.I., Drachev R.V., Khlebnikov I.I., Deng X., Sudarshan T.S. Thermal stress as a major factor of defects generation in SiC during PVT growth // Mat. Res. Soc. Symp. – 2003. – 742. – P. K2.18.1–K2.18.6.

20.Timoshenko S.P., Goodier J.N. Theory of Elasticity // New York: McGraw-Hill Book Company, 1970. – 576 p.

21.Fujita S., Maeda K., Hyodo. Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation // Philosoph. Mag. A. – 1987. – V.55, N2. – P. 203–215.

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22.ǶțȒȓțȏȜȚ ǰ.ǹ., ǼȞșȜȐ Ǯ.ǻ. ȂȖȕȖȥȓȟȘȎȭ ȠȓȜȞȖȭ ȝșȎȟȠȖȥțȜȟȠȖ Ȗ ȝȞȜȥțȜȟȠȖ. ȁȂǻ. – 1962. – 76, Ɋ3. – C. 557–591.

23.Drachev R.V., Cherednichenko D.I., Khlebnikov I.I., Khlebnikov Y.I. Sudarshan T.S. Graphitization of the seeding surface at the furnace heat up stage of SiC PVT bulk growth // Mat. Sci. Forum. – 2003. – 433–436. – P. 99–102.

24.Drachev R.V., Straty G.D., D.I. Cherednichenko, Khlebnikov I.I. Sudarshan T.S. Liquid phase silicon at the front of crystallization during SiC PVT growth // J. Cryst. Growth. – 2001. – 233, N3. – P. 541–547.

25.Stroh A.N. The formation of cracks as a result of plastic Áow // Prop. of Royal Society of London. Series A. Mathematical and Phys. Sci. – 1954. – 223. – P. 404.

26.Mullins W.W. Flattering of a Nearly Plane solid surface due to Capillarity // J. Appl Phys. – 1959. – 30, N1. – P. 77–83.

27.Hofmann D., Schmitt E., Bickermann M., Kolbl M., Wellmann P.J., Winnacker A. Analysis on defect generation during the SiC bulk growth process // Mat. Sci. Eng. B. – 1999. – 61– 62. – P. 48–53.

28.Kato T., Ohsato H., Okamoto A., Sugiyama N., Okuda T. Photoelastic constant and internal stress around micropipe defects of 6H-SiC single crystal // Mat. Sci. Eng. B: Sol.-State Mat. for Advanced Technology. – 1999. – B 57, N2. – P. 147–149.

DZșȎȐȎ 5 ǰȩȞȎȧȖȐȎțȖȓ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȟșȜȓȐ Ȗ ȘȞȖȟȠȎșșȜȐ ȚȓȠȜȒȜȚ ȝȎȞȜȢȎȕțȜȑȜ

ȣȖȚȖȥȓȟȘȜȑȜ ȜȟȎȔȒȓțȖȭ

ǺȓȠȜȒ ȝȎȞȜȢȎȕțȜȑȜ ȣȖȚȖȥȓȟȘȜȑȜ ȜȟȎȔȒȓțȖȭ (CVD) ȦȖȞȜȘȜ ȖȟȝȜșȪȕȡȓȠȟȭȒșȭȜȟȎȔȒȓțȖȭȠȜțȘȖȣȝșȓțȜȘțȎȝȜȒșȜȔȘȎȣȖȕ ȠȐȓȞȒȩȣ țȓșȓȠȡȥȖȣȚȎȠȓȞȖȎșȜȐ. DZȎȕȜȐȎȭȢȎȕȎȒȜșȔțȎȟȜȒȓȞȔȎȠȪȠȞȓȏȡȓȚȩȓ ȘȜȚȝȜțȓțȠȩȣȖȚȖȥȓȟȘȖȣȞȓȎȑȓțȠȜȐ. ȋȠȜȠȚȓȠȜȒȦȖȞȜȘȜȖȟȝȜșȪȕȡȓȠȟȭ Ȑ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȜȗ ȠȓȣțȜșȜȑȖȖ Ȓșȭ ȜȟȎȔȒȓțȖȭ ȚȜțȜȘȞȖȟȠȎșșȖȥȓȟȘȖȣ, ȝȜșȖȘȞȖȟȠȎșșȖȥȓȟȘȖȣ Ȗ ȎȚȜȞȢțȩȣ ȝșȓțȜȘ, țȎȝȞȖȚȓȞ, ȘȞȓȚțȖȭ, țȖȠȞȖȒȎ ȘȞȓȚțȖȭ Ȗ ȒȞȡȑȖȣ ȚȎȠȓȞȖȎșȜȐ. ǺȓȠȜȒ CVD ȐȘșȬȥȎȓȠ ȞȭȒ ȫȠȎȝȜȐ, Ȑ ȠȜȚ ȥȖȟșȓ:

x ȝȞȓȒȐȎȞȖȠȓșȪțȜȓ ȝȓȞȓȚȓȦȖȐȎțȖȓ ȑȎȕȜȐ-ȞȓȎȑȓțȠȜȐ, ȖțȓȞȠțȜȑȜ ȑȎȕȎ-țȜȟȖȠȓșȭ Ȗ ȐȐȓȒȓțȖȓ ȫȠȜȗ ȟȚȓȟȖ Ȑ ȘȎȚȓȞȡ;

x ȝȜȒȎȥȡ ȑȎȕȜȐȜȗ ȟȚȓȟȖ Ș ȝȜȒșȜȔȘȓ;

x ȎȒȟȜȞȏȤȖȬ ȞȓȎȑȓțȠȜȐ țȎ ȝȜȐȓȞȣțȜȟȠȖ ȝȜȒșȜȔȘȖ;

x ȣȖȚȖȥȓȟȘȖȓȞȓȎȘȤȖȖȝȜȜȏȞȎȕȜȐȎțȖȬȝșȓțȘȖțȎȝȜȐȓȞȣțȜȟȠȖ ȝȜȒșȜȔȘȖ;

x ȡȒȎșȓțȖȓȑȎȕȜȜȏȞȎȕțȩȣȝȜȏȜȥțȩȣȝȞȜȒȡȘȠȜȐȞȓȎȘȤȖȗȖȕ ȘȎȚȓȞȩ.

ǰ ȟșȡȥȎȓ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ Ȑ ȞȓȎȘȤȖȜțțȡȬ ȘȎȚȓȞȡ ȝȞȖ ȝȜȚȜȧȖ ȑȎȕȎ-țȜȟȖȠȓșȭ, Ȑ ȘȎȥȓȟȠȐȓ ȘȜȠȜȞȜȑȜ ȖȟȝȜșȪȕȡȓȠȟȭ ȖȟȘșȬȥȖȠȓșȪțȜ ȐȜȒȜȞȜȒ, ȐȐȜȒȭȠ Ȑ ȑȎȕȜȜȏȞȎȕțȜȚ ȟȜȟȠȜȭțȖȖ ȘȞȓȚțȖȗ Ȗ ȡȑșȓȞȜȒȟȜȒȓȞȔȎȧȖȓ ȘȜȚȝȜțȓțȠȩ Ȗ ȐȩȞȎȧȖȐȎȬȠ SiC țȎ ȝȜȒșȜȔȘȓ. ǺȓȠȜȒ ȝȜȕȐȜșȭȓȠ ȜȠțȜȟȖȠȓșȪțȜ șȓȑȘȜ ȜȟȡȧȓȟȠȐșȭȠȪ șȓȑȖȞȜȐȎțȖȓ. ǾȜȟȠ ȐȓȒȓȠȟȭ ȝȞȖ ȟȞȎȐțȖȠȓșȪțȜ țȓȐȩȟȜȘȜȗ ȠȓȚȝȓȞȎȠȡȞȓ. Dzșȭ șȓȑȖȞȜȐȎțȖȭ ȎȘȤȓȝȠȜȞțȜȗ ȝȞȖȚȓȟȪȬ Ȑ ȞȓȎȘȤȖȜțțȡȬ ȘȎȚȓȞȡ ȐȐȜȒȭȠ AlCl3 ȖșȖ B2H6. Dzșȭ ȝȜșȡȥȓțȖȭ ȟșȜȓȐ ȟ ȝ-ȠȖȝȜȚ ȝȞȜȐȜȒȖȚȜȟȠȖ Ȗ ȐȩȟȜȘȜȗ ȘȜțȤȓțȠȞȎȤȖȓȗ ȝȞȖȚȓȟȖ ȖȟȝȜșȪȕȡȓȠȟȭ NH3.

ǻȎ ȞȖȟ. 5.1 ȝȞȓȒȟȠȎȐșȓțȎ ȠȖȝȜȐȎȭ ȟȣȓȚȎ ȡȟȠȎțȜȐȘȖ CVD Ȗ ȘȜțȟȠȞȡȘȤȖȭ ȞȓȎȘȠȜȞȎ ȑȜȞȖȕȜțȠȎșȪțȜȑȜ ȠȖȝȎ. ȅȠȜȏȩ ȜȏȓȟȝȓȥȖȠȪ

ȅȎȟȠȪ I, DZșȎȐȎ 5

99

 

 

ǾȖȟ. 5.1. ȀȖȝȜȐȎȭ ȟȣȓȚȎ CVD-ȡȟȠȎțȜȐȘȖ (a) Ȗ ȐțȡȠȞȓțțȭȭ ȘȜțȟȠȞȡȘȤȖȭ ȞȓȎȘȠȜȞȎ ȑȜȞȖȕȜțȠȎșȪțȜȑȜ ȠȖȝȎ (ȏ). 1 – ȢȖșȪȠȞ Ȓșȭ ȜȥȖȟȠȘȖ ȐȜȒȜȞȜȒȎ, 2 – ȞȜȠȎȚȓȠȞȩ, 3 – ȞȓȎȘȤȖȜțțȎȭȘȎȚȓȞȎ, 4 – ȐȎȘȡȡȚțȩȗțȎȟȜȟ, 5 – ȒȓȞȔȎȠȓșȪ ȘȞȖȟȠȎșșȎ-ȕȎȠȞȎȐȘȖ

ȞȎȐțȜȚȓȞțȩȗ ȝȜȠȜȘ ȑȎȕȎ Ȗ ȖȟȘșȬȥȖȠȪ ȐȜȕȚȡȧȎȬȧȖȓ ȐȜȕȒȓȗȟȠȐȖȭ, ȥȎȟȠȪȝȜȒȟȠȎȐȘȖ-ȒȓȞȔȎȠȓșȭ, ȜȏȞȎȧȓțțȎȭȘȐȝȡȟȘțȜȚȡȜȠȐȓȞȟȠȖȬȒșȭ ȝȜȒȎȥȖ ȑȎȕȎ, ȐȩȝȜșțȓțȎ Ȑ ȐȖȒȓ țȎȘșȜțțȜȗ ȝȜȐȓȞȣțȜȟȠȖ. Dzșȭ ȝȜșȡȥȓțȖȭ ȠȞȓȏȡȓȚȜȗ ȠȓȚȝȓȞȎȠȡȞȩ Ȑ ȞȓȎȘȤȖȜțțȜȗ ȘȎȚȓȞȓ ȖȟȝȜșȪȕȡȓȠȟȭ ȖțȒȡȘȤȖȜțțȩȗ țȎȑȞȓȐ ȠȜȘȎȚȖ ȐȩȟȜȘȜȗ ȥȎȟȠȜȠȩ (200 500 ȘDZȤ). ǰ ȘȎȥȓȟȠȐȓȞȓȎȘȤȖȜțțȩȣȑȎȕȜȐȐȚȓȠȜȒȓCVD ȝȞȖȚȓțȭȬȠSiCl4–C6H14,

SiH4-C3H8, CH3SiCl3, SiH4-C2H2, SiC14-C3H3 ȖȒȞȡȑȖȓ. ǼȟȜȏȜȑȜȐțȖȚȎțȖȭ ȠȞȓȏȡȓȠ ȐȩȏȜȞ ȚȜșȭȞțȩȣ ȒȜșȓȗ ȖȟȣȜȒțȩȣ ȘȜȚȝȜțȓțȠȜȐ Ȑ ȟȚȓȟȖ.

ǸȎȘ ȝȞȎȐȖșȜ, ȚȜțȜȘȞȖȟȠȎșșȖȥȓȟȘȖȓ ȟșȜȖ ȝȜșȡȥȎȬȠ ȝȞȖ ȐȓȟȪȚȎ țȖȕȘȜȚ ȜȠțȜȦȓțȖȖ ȚȜșȭȞțȜȗ ȘȜțȤȓțȠȞȎȤȖȖ ȘȞȓȚțȖȭ Ș ȚȜșȭȞțȜȗ ȘȜțȤȓțȠȞȎȤȖȖ ȐȜȒȜȞȜȒȎ Si/H<103. ǿȜȜȠțȜȦȓțȖȓ ȚȜșȭȞțȩȣ ȒȜșȓȗ ȘȜȚȝȜțȓțȠȜȐ Ȑ ȟȚȓȟȖ Si/C ȚȜȔțȜ ȐȎȞȪȖȞȜȐȎȠȪ Ȑ ȒȜȐȜșȪțȜ ȦȖȞȜȘȖȣ ȝȞȓȒȓșȎȣ 0.5 20. ǮȐȠȜȞȩ [1] ȠȓȜȞȓȠȖȥȓȟȘȖ Ȗ ȫȘȟȝȓȞȖȚȓțȠȎșȪțȜ ȖȟȟșȓȒȜȐȎșȖ ȐșȖȭțȖȓ ȟȜȟȠȎȐȎ ȑȎȕȜȐȜȗ ȢȎȕȩ țȎ ȞȜȟȠ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȝșȓțȜȘ SiC. ǿȜȑșȎȟțȜ ȠȓȞȚȜȒȖțȎȚȖȥȓȟȘȖȚ ȞȎȟȥȓȠȎȚ ȟȘȜȞȜȟȠȪ ȞȜȟȠȎ ȡȐȓșȖȥȖȐȎȓȠȟȭ ȟ ȞȜȟȠȜȚ ȜȠțȜȦȓțȖȭ Si/(Si+C) ȒȜ 0.496, ȝȜȟșȓ ȥȓȑȜ ȞȓȕȘȜ ȝȎȒȎȓȠ. ȋȘȟȝȓȞȖȚȓțȠȎșȪțȩȓ ȒȎțțȩȓ ȟȜȑșȎȟȡȬȠȟȭ ȟ ȞȎȟȥȓȠȜȚ.

100 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ǰȩȞȎȧȖȐȎțȖȓ ȝȞȜȖȕȐȜȒȖȠȟȭ Ȑ ȒȖȎȝȎȕȜțȓ ȠȓȚȝȓȞȎȠȡȞ ȜȠ 1100 ȒȜ 2100°ǿ. ǶȟȝȜșȪȕȡȓȚȎȭ ȠȓȚȝȓȞȎȠȡȞȎ ȐȜ ȚțȜȑȜȚ ȜȝȞȓȒȓșȭȓȠȟȭ ȚȎȠȓȞȖȎșȜȚ ȝȜȒșȜȔȘȖ. ȀȎȘ ȝȞȖ ȝȞȖȚȓțȓțȖȖ ȘȞȓȚțȖȭ Ȑ ȘȎȥȓȟȠȐȓ ȝȜȒșȜȔȘȖ ȠȓȚȝȓȞȎȠȡȞȎ ȜȟȎȔȒȓțȖȭ țȓ ȚȜȔȓȠ ȝȞȓȐȩȦȎȠȪ ȠȓȚȝȓȞȎȠȡȞȩ ȝșȎȐșȓțȖȭ ȘȞȓȚțȖȭ (_1420°ǿ).

ǰȞȎȏȜȠȎȣ[1 3] ȏȩșȖȝȞȜȐȓȒȓțȩȖȟȟșȓȒȜȐȎțȖȭȚȓȣȎțȖȕȚȎȞȜȟȠȎ ȚȜțȜȘȞȖȟȠȎșșȜȐ Ȗ ȫȝȖȟșȜȓȐ SiC Ȑ ȟșȡȥȎȓ CVD-ȝȞȜȤȓȟȟȎ. ǽȞȖțȖȚȎșȜȟȪ, ȥȠȜȐȟȖȟȠȓȚȓȞȓȎșȖȕȡȓȠȟȭșȎȚȖțȎȞțȩȗȞȓȔȖȚȑȎȕȜȐȜȑȜȝȜȠȜȘȎ. ǶȟȝȜșȪȕȜȐȎșȎȟȪ ȚȜȒȓșȪȝȞȖȑȞȎțȖȥțȜȑȜȟșȜȭȐȝȞȓȒȝȜșȜȔȓțȖȖ, ȥȠȜ țȎ ȝȜȐȓȞȣțȜȟȠȖ ȝȜȒșȜȔȘȖ Ȗ ȐȏșȖȕȖ ȓȓ ȟȘȜȞȜȟȠȪ ȑȎȕȜȐȜȑȜ ȝȜȠȜȘȎ ȞȎȐțȎ țȡșȬ. ǽȞȖ ȫȠȜȚ ȞȎȟȟȚȎȠȞȖȐȎșȜȟȪ ȒȐȎ ȞȓȔȖȚȎ:

1. ǽȞȖ ȐȩȟȜȘȖȣ ȠȓȚȝȓȞȎȠȡȞȎȣ (Ȁ> 1400°ǿ) ȚȎȟȟȜȝȓȞȓțȜȟ Ȗ ȟȘȜȞȜȟȠȪ ȞȜȟȠȎ ȝșȓțȘȖ țȎ ȝȜȒșȜȔȘȓ ȜȝȞȓȒȓșȭȬȠȟȭ ȒȖȢȢȡȕȖȓȗ ȘȜȚȝȜțȓțȠ ȥȓȞȓȕ ȝȜȑȞȎțȖȥțȩȗ ȟșȜȗ [1]. ȋȠȜȠ ȝȞȜȤȓȟȟ ȜȠțȜȟȖȠȓșȪțȜ ȟșȎȏȜ ȕȎȐȖȟȖȠ ȜȠȠȓȚȝȓȞȎȠȡȞȩ. ǿȜȜȠțȜȦȓțȖȓ ȚȓȔȒȡȟȘȜȞȜȟȠȪȬ ȞȜȟȠȎVg Ȗ ȠȓȚȝȓȞȎȠȡȞȜȗ Ȑ ȫȠȜȚ ȞȓȔȖȚȓ ȚȜȔȓȠ ȏȩȠȪ ȝȞȓȒȟȠȎȐșȓțȜ Ȑ ȐȖȒȓ

Vg!(T/ T0)n,

(5.1)

ȑȒȓȀ – ȠȓȚȝȓȞȎȠȡȞȎȞȜȟȠȎ, T0 – ȘȜȚțȎȠțȎȭȠȓȚȝȓȞȎȠȡȞȎ, n=0.25 0.45. ǰȫȠȜȚȟșȡȥȎȓȘȎȔȡȧȎȭȟȭȫțȓȞȑȖȭȎȘȠȖȐȎȤȖȖȝȞȜȤȓȟȟȎȞȜȟȠȎȟȜȟȠȎȐșȭȓȠ 3.5 4.5 ǸȘȎș/ȚȜșȪ [4].

2. ǽȞȖ ȜȠțȜȟȖȠȓșȪțȜ țȖȕȘȖȣ ȠȓȚȝȓȞȎȠȡȞȎȣ _1100 1400°ǿ Vg ȜȝȞȓȒȓșȭȓȠȟȭ ȑȓȠȓȞȜȑȓțțȩȚȖ ȞȓȎȘȤȖȭȚȖ. ǽȞȖ ȫȠȜȚ ȟȘȜȞȜȟȠȪ ȞȜȟȠȎ ȒȜșȔțȎȟȖșȪțȜȕȎȐȖȟȓȠȪȜȠȠȓȚȝȓȞȎȠȡȞȩ. ǰȞȓȔȖȚȓ, șȖȚȖȠȖȞȡȓȚȜȚ ȑȓȠȓȞȜȑȓțțȩȚȖ ȞȓȎȘȤȖȭȚȖ, Vg ȜȝȞȓȒȓșȭȓȠȟȭ ȎȒȟȜȞȏȤȖȓȗ ȞȓȎȑȖȞȡȬȧȖȣ ȘȜȚȝȜțȓțȠȜȐ, ȞȓȎȘȤȖȭȚȖ ȞȎȕșȜȔȓțȖȭ-ȐȜȟȟȠȎțȜȐșȓțȖȭ Ȗ ȒȓȟȜȞȏȤȖȓȗȝȞȜȒȡȘȠȜȐȞȓȎȘȤȖȗ. ǰȟșȡȥȎȓ, ȘȜȑȒȎVg ȘȜțȠȞȜșȖȞȡȓȠȟȭ ȑȓȠȓȞȜȑȓțțȩȚȖ ȞȓȎȘȤȖȭȚȖ, ȟȝȞȎȐȓȒșȖȐȜ ȡȞȎȐțȓțȖȓ ǮȞȞȓțȖȡȟȎ

Vg= Vg0exp( %E/ RT),

(5.2)

ȑȒȓ %E – ȘȎȔȡȧȎȭȟȭ ȫțȓȞȑȖȭ ȎȘȠȖȐȎȤȖȖ, R – ȡțȖȐȓȞȟȎșȪțȎȭ ȑȎȕȜȐȎȭ ȝȜȟȠȜȭțțȎȭ. ǰȓșȖȥȖțȎ %E ȚȜȔȓȠ ȏȩȠȪ ȜȝȞȓȒȓșȓțȎ Ȗȕ țȎȘșȜțȎ ȕȎȐȖȟȖȚȜȟȠȖ Vg_f(1/ T). ǰ șȖȠȓȞȎȠȡȞȓ ȖȚȓȓȠȟȭ ȏȜșȪȦȜȗ ȞȎȕȏȞȜȟ

ȐȓșȖȥȖț %E. ȀȎȘ ȝȞȖ ȐȩȞȎȧȖȐȎțȖȖ ȝșȓțȜȘ 3ǿ-SiC țȎ 6ǻ-SiC ȝȜȒșȜȔȘȎȣ %E ȘȜșȓȏșȓȠȟȭ Ȑ ȝȞȓȒȓșȎȣ %E= 12 26 ǸȘȎș/ȚȜșȪ.

ȅȎȟȠȪ I, DZșȎȐȎ 5

101

 

 

5.1. DZȓȠȓȞȜȫȝȖȠȎȘȟȖȭ

ǽȞȖȖȟȝȜșȪȕȜȐȎțȖȖȘȞȓȚțȖȭȐȘȎȥȓȟȠȐȓȝȜȒșȜȔȓȘȜȟțȜȐțȜȗȝȞȜȏșȓ- ȚȜȗȭȐșȭȓȠȟȭțȓȟȜȜȠȐȓȠȟȠȐȖȓȝȜȟȠȜȭțțȩȣȞȓȦȓȠȜȘ3C-SiC (a=4.3598 Å) ȖȘȞȓȚțȖȭ(5.4282 Å), ȎȠȎȘȔȓȟȡȧȓȟȠȐȓțțȎȭȞȎȕțȖȤȎȐȘȜȫȢȢȖȤȖȓțȠȎȣ ȠȓȞȚȖȥȓȟȘȜȑȜ ȞȎȟȦȖȞȓțȖȭ. ǮȐȠȜȞȩ [5] ȜȝȞȓȒȓșȭȬȠ ȟȞȓȒțȓȓ ȕțȎȥȓțȖȓ ȘȜȫȢȢȖȤȖȓțȠȜȐ ȠȓȞȚȖȥȓȟȘȜȑȜ ȞȎȟȦȖȞȓțȖȭ Si Ȗ SiC Ȑ ȠȓȚȝȓȞȎȠȡȞțȜȚ ȒȖȎȝȎȕȜțȓ 293 673 Ǹ ȘȎȘ 3.6¸10 6 ȑȞȎȒ 1 Ȗ 4.9¸10 6 ȑȞȎȒ 1, ȟȜȜȠȐȓȠȟȠȐȓțțȜ. ȋȠȖ ȞȎȕșȖȥȖȭ ȝȞȖȐȜȒȭȠ Ș ȐȜȕțȖȘțȜȐȓțȖȬ ȚȓȣȎțȖȥȓȟȘȖȣ țȎȝȞȭȔȓțȖȗțȎȑȞȎțȖȤȓȞȎȕȒȓșȎȚȓȔȒȡȝȜȒșȜȔȘȜȗȖȫȝȖȠȎȘȟȖȎșȪțȩȚ ȟșȜȓȚ, ȥȠȜ ȟȝȜȟȜȏȟȠȐȡȓȠ ȢȜȞȚȖȞȜȐȎțȖȬ ȏșȜȘȜȐ, ȒȐȜȗțȖȘȜȐ Ȗ ȒȓȢȓȘȠȜȐ ȡȝȎȘȜȐȘȖ, ȞȎȟȝȞȜȟȠȞȎțȭȬȧȖȣȟȭ ȐȑșȡȏȪ ȫȝȖȠȎȘȟȖȎșȪțȜȑȜ ȟșȜȭ [6 9]. Dzșȭ ȟțȖȔȓțȖȭ ȐșȖȭțȖȭ ȞȎȟȟȜȑșȎȟȜȐȎțȖȭ ȝȎȞȎȚȓȠȞȜȐ ȞȓȦȓȠȜȘ țȎ ȘȎȥȓȟȠȐȜ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȝșȓțȜȘ ȖȟȝȜșȪȕȡȓȠȟȭ ȚȓȠȜȒ țȎțȓȟȓțȖȭ ȝȞȜȚȓȔȡȠȜȥțȜȑȜ ȏȡȢȓȞțȜȑȜ ȟșȜȭ [10 12]. ǽȞȖȞȜȒȎ ȏȡȢȓȞțȜȑȜȟșȜȭȖȟȟșȓȒȜȐȎșȎȟȪ ȚȓȠȜȒȎȚȖ ȚȭȑȘȜȗȞȓțȠȑȓțȜȐȟȘȜȗ ȟȝȓȘ-

ȠȞȜȟȘȜȝȖȖ (medium energy ion scattering MEIS) Ȗ ȝȞȜȟȐȓȥȖȐȎȬȧȓȗ ȫșȓȘȠȞȜțțȜȗ ȚȖȘȞȜȟȝȓȘȠȞȜȟȘȜȝȖȓȗ – Transmission Electron Microscope (TEM). ȁȟȠȎțȜȐșȓțȜ, ȥȠȜ ȏȡȢȓȞțȩȗ ȟșȜȗ ȭȐșȭȓȠȟȭ ȠȜțȘȖȚ (țȓȟȘȜșȪȘȜ țȚ) ȚȜțȜȘȞȖȟȠȎșșȖȥȓȟȘȖȚ 3C-SiC. ǻȎșȖȥȖȓ ȏȡȢȓȞțȜȑȜ ȟșȜȭȝȞȖȐȜȒȖȠȘȞȓȕȘȜȚȡȟțȖȔȓțȖȬțȎȝȞȭȔȓțȖȗ, ȎȫȝȖȠȎȘȟȖȎșȪțȩȓ ȟșȜȖȖȚȓȬȠȒȜȟȠȎȠȜȥțȜȟȜȐȓȞȦȓțțȡȬȟȠȞȡȘȠȡȞȡ. ǶȕȐȓȟȠțȜțȓȟȘȜșȪȘȜ ȟȝȜȟȜȏȜȐ țȎțȓȟȓțȖȭ ȏȡȢȓȞțȜȑȜ ȟșȜȭ. ȀȎȘ Ȑ ȞȎȏȜȠȓ [13] ȓȑȜ țȎțȜȟȖșȖ ȝȡȠȓȚȞȎȟȝȩșȓțȖȭȚȖȦȓțȖȖȕȘȎȞȏȖȒȎȘȞȓȚțȖȭȐȐȩȟȜȘȜȥȎȟȠȜȠțȜȚ ȞȎȕȞȭȒȓ Ȑ ȎȞȑȜțȓ. ǯȜșȓȓ ȦȖȞȜȘȜ ȝȞȖȚȓțȭȓȠȟȭ ȒȞȡȑȜȗ ȟȝȜȟȜȏ. ȋȠȜ ȠȎȘ țȎȕȩȐȎȓȚȎȭ ȘȎȞȏȜțȖȕȎȤȖȭ – țȎțȓȟȓțȖȓ ȠȜțȘȜȑȜ ȟșȜȭ ȡȑșȓȞȜȒȎ țȎ ȘȞȓȚțȖȓȐȡȬ ȝȜȒșȜȔȘȡ țȓȝȜȟȞȓȒȟȠȐȓțțȜ ȝȓȞȓȒ ȝȞȜȤȓȟȟȜȚ ȞȜȟȠȎ. Dzșȭ ȫȠȜȑȜ ȝȜȒșȜȔȘȡ ȝȞȓȒȐȎȞȖȠȓșȪțȜ ȝȞȜȑȞȓȐȎȬȠ ȒȜ ȠȓȚȝȓȞȎȠȡȞȩ 1360Ȝǿ Ȗ Ȑ ȝȜȠȜȘ ȑȎȕȎ-țȜȟȖȠȓșȭ ȐȐȜȒȭȠ ƙ3ƕ8 [14, 15].

ǰ țȎȟȠȜȭȧȓȓ ȐȞȓȚȭ CVD-ȚȓȠȜȒȜȚ ȝȜșȡȥȎȬȠ ȐȩȟȜȘȜȘȎȥȓȟȠȐȓțțȩȓ 3C-SiC ȫȝȖȠȎȘȟȖȎșȪțȩȓ ȟșȜȖ țȎ ȘȞȓȚțȖȓȐȩȣ ȝȜȒșȜȔȘȎȣ ȏȜșȪȦȜȗ ȝșȜȧȎȒȖ. ǸȜțȤȓțȠȞȎȤȖȬ ȝȞȖȚȓȟȓȗ ȚȜȔțȜ ȐȎȞȪȖȞȜȐȎȠȪ

ȜȠ 1.1015 ȒȜ 1019 ȟȚ 3, Ȏ ȝȜȒȐȖȔțȜȟȠȪ ȫșȓȘȠȞȜțȜȐ ȒȜȟȠȖȑȎȓȠ ȕțȎȥȓțȖȭ 520 ȟȚ2/ǰ¸ȟ.

ǰȓȒȡȠȟȭȞȎȏȜȠȩȝȜȟȠȖȚȡșȖȞȜȐȎțȖȬȞȜȟȠȎșȎȕȓȞțȩȚȖȕșȡȥȓțȖȓȚ. ǽșȓțȘȖȜȟȎȔȒȎȬȠțȎȝȜȒșȜȔȘȖ, ȞȎȕȜȑȞȓȐȎȓȚȩȓȖȕșȡȥȓțȖȓȚƙƖ2 șȎȕȓȞȎȟM=9.27 ȚȘȚ. ȁȟȠȎțȜȐșȓțȜ[16], ȥȠȜȝȜșȡȥȎȓȚȩȓȝșȓțȘȖȖȚȓȬȠ ȝȓȞȖȜȒȖȥȓȟȘȡȬ ȐȜșțȜȜȏȞȎȕțȡȬ ȟȠȞȡȘȠȡȞȡ, ȟȜȟȠȜȭȧȡȬ Ȗȕ ȒȐȡȣ ȝȜȒ-

102 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ȟȖȟȠȓȚ ȝȡȥțȜȟȠȓȗ. ǽȓȞȖȜȒ ȝȜȐȠȜȞȓțȖȭ ȜȝȞȓȒȓșȭȓȠȟȭ ȒșȖțȜȗ ȐȜșțȩ șȎȕȓȞțȜȑȜ ȖȕșȡȥȓțȖȭ Ȗ ȜȏȡȟșȜȐșȓț ȝȓȞȖȜȒȖȥțȩȚ ȞȎȟȝȞȓȒȓșȓțȖȓȚ ȠȓȚȝȓȞȎȠȡȞȩțȎȝȜȒșȜȔȘȓ. ǶȟȝȜșȪȕȜȐȎțȖȓȘȜȞȜȠȘȜȐȜșțȜȐȜȑȜȖȕșȡȥȓțȖȭ (M=380 țȚ) ȝȞȖȐȜȒȖȠ Ș ȜȏȞȎȕȜȐȎțȖȬ ȟȐȓȞȣȞȓȦȓȠȜȘ Ȑ ȟȠȞȡȘȠȡȞȓ ȝșȓțȜȘ SiC țȎ ȝȜȒșȜȔȘȎȣ Ȗȕ Al2O3 Ȗ ȟȠȖȚȡșȖȞȡȓȠ Ȗȣ ȞȜȟȠ [17].

ǻȓȟȚȜȠȞȭ țȎ ȝȞȜȑȞȓȟȟ Ȑ ȠȓȣțȜșȜȑȖȖ 3C-SiC ȝșȓțȘȖ țȎ ȘȞȓȚțȖȖ ȒȜȟȖȣȝȜȞȟȜȒȓȞȔȎȠȏȜșȪȦȜȓȘȜșȖȥȓȟȠȐȜȒȓȢȓȘȠȜȐȟȠȞȡȘȠȡȞȩ:ȒȐȜȗțȖȘȖ, ȒȓȢȓȘȠȩȡȝȎȘȜȐȘȖȖȎțȠȖȢȎȕțȩȓȑȞȎțȖȤȩ(antiphase boundaries APB). ǶȟȝȜșȪȕȜȐȎțȖȓȞȎȕȜȞȖȓțȠȖȞȜȐȎțțȩȣȝȜȒșȜȔȓȘȘȞȓȚțȖȭȜȠțȜȟȖȠȓșȪțȜ ȝșȜȟȘȜȟȠȖ (100) ȝȜȕȐȜșȭȓȠ ȖȕȏȓȔȎȠȪ ȜȏȞȎȕȜȐȎțȖȭ APB ȒȓȢȓȘȠȜȐ.

5.2. DZȜȚȜȫȝȖȠȎȘȟȖȭ

3C-SiC țȎ6H-SiC ȝȜȒșȜȔȘȎȣ. ǽȞȖȖȟȝȜșȪȕȜȐȎțȖȖȚȜțȜȘȞȖȟȠȎșșȜȐ SiC Ȑ ȘȎȥȓȟȠȐȓ ȝȜȒșȜȔȓȘ ȟțȖȚȎȓȠȟȭ ȞȭȒ ȝȞȜȏșȓȚ, ȐȜȕțȖȘȎȬȧȖȣ ȝȞȖ ȑȓȠȓȞȜȫȝȖȠȎȘȟȖȖ. ȀȎȘ Ȑ ȟșȡȥȎȓ ȐȩȞȎȧȖȐȎțȖȭ 3C-SiC țȎ 6H-SiC ȝȜȒșȜȔȘȎȣ 3ǿ(111) / 6ǻ(0001) ȞȎȕțȜȟȠȪ ȝȜȟȠȜȭțțȩȣ ȞȓȦȓȠȘȖ țȓ ȝȞȓȐȩȦȎȓȠ 0.3%. ǸȜȫȢȢȖȤȖȓțȠȩ ȠȓȞȚȖȥȓȟȘȜȑȜ ȞȎȟȦȖȞȓțȖȭ ȠȎȘȔȓ ȏșȖȕȘȖ. ǰȟȓ ȫȠȜ ȝȜȕȐȜșȭȓȠ CVD-ȚȓȠȜȒȜȚ ȝȜșȡȥȎȠȪ ȒȜȐȜșȪțȜ ȐȩȟȜȘȜȘȎȥȓȟȠȐȓțțȩȓ ȫȝȖȠȎȘȟȖȎșȪțȩȓ ȟșȜȖ [17 19]. ǼȝȠȖȚȎșȪțȩȗ ȠȓȚȝȓȞȎȠȡȞțȩȗ ȞȓȔȖȚ Ȓșȭ ȞȜȟȠȎ ȑȓȘȟȎȑȜțȎșȪțȩȣ ȟșȜȓȐ ȫȠȜ ȖțȠȓȞȐȎș 1700 1750°ǿ. ǸȡȏȖȥȓȟȘȖȗ ȘȎȞȏȖȒ ȘȞȓȚțȖȭ ȜȏȞȎȕȡȓȠȟȭ ȝȞȖ ȏȜșȓȓ țȖȕȘȖȣ ȠȓȚȝȓȞȎȠȡȞȎȣ. ǿȘȜȞȜȟȠȪ ȞȜȟȠȎ Ȗ ȘȎȥȓȟȠȐȜ ȫȝȖȟșȜȓȐ țȎ ȑȞȎțȖ (0001)Si ȐȩȦȓ, ȥȓȚ țȎ (0001)ƙ 6ǻ-SiC ȝȜȒșȜȔȓȘ. ǽșȓțȘȖ 3C-SiC ȐȩȞȎȧȓțțȩȓ țȎ 6H-SiC, ȘȎȘ ȝȞȎȐȖșȜ, ȖȚȓȬȠ ȕțȎȥȖȠȓșȪțȜ ȏȜșȓȓ țȖȕȘȡȬ ȝșȜȠțȜȟȠȪ ȒȓȢȓȘȠȜȐ, ȥȓȚ ȝșȓțȘȖ ȐȩȞȎȧȓțțȩȓ țȎ Si. ȀȓȚ țȓ Țȓțȓȓ, ȜțȖ ȟȜȒȓȞȔȎȠ ȐȩȟȜȘȡȬ ȝșȜȠțȜȟȠȪ ȑȞȎțȖȤ ȒȐȜȗțȖ-

ȘȜȐȎțȖȭ (double position boundaries – DPBs) [20,21]. ǮȐȠȜȞȩ [20]

ȡȠȐȓȞȔȒȎȬȠ, ȥȠȜ ȚȜțȜȘȞȖȟȠȎșșȖȥȓȟȘȖȓ ȟșȜȖ 3C-SiC Ȑ ȝȞȖțȤȖȝȓ, țȓ ȚȜȑȡȠ ȏȩȠȪ ȝȜșȡȥȓțȩ țȎ ȣȜȞȜȦȜ ȜȞȖȓțȠȖȞȜȐȎțțȩȣ ȑȞȎțȭȣ (0001)Si 6H-SiC. ȀȜșȪȘȜ ȞȎȕȜȞȖȓțȠȎȤȖȭ ȝȜȒșȜȔȓȘ ȝȜȕȐȜșȭȓȠ ȐȩȞȎȧȖȐȎȠȪ ȚȜțȜȘȞȖȟȠȎșșȖȥȓȟȘȖȓ ȟșȜȖ. ȋȠȜȠ ȐȩȐȜȒ ȜȏȨȭȟțȭȓȠȟȭ Ȑ ȞȎȚȘȎȣ ȚȜȒȓșȖ ȝȜȐȓȞȣțȜȟȠțȩȣ ȟȠȡȝȓțȓȗ. ǽȞȖ ȫȠȜȚ ȡȥȖȠȩȐȎșȖȟȪ ȜȟȜȏȓțțȜȟȠȖ ȟȠȞȜȓțȖȭ ȘȞȖȟȠȎșșȜȐ ȘȎȞȏȖȒȎȘȞȓȚțȖȭ. ǶȕȐȓȟȠțȜ, ȥȠȜȝȜșȖȠȖȝȩ SiC ȞȎȕșȖȥȎȬȠȟȭ ȝȜȟșȓȒȜȐȎȠȓșȪțȜȟȠȪȬ ȡȘșȎȒȘȖ ȒȐȜȗțȩȣ ȟșȜȓȐ Si Ȗ C Ȗ ȥȖȟșȜȚ ȟșȜȓȐ Ȑ ȝȓȞȖȜȒȓ ȝȜȐȠȜȞȭȓȚȜȟȠȖ. ǰ ȥȎȟȠțȜȟȠȖ 3ǿ-SiC ȣȎȞȎȘȠȓȞȖȕȡȓȠȟȭ ȝȜȟșȓȒȜȐȎȠȓșȪțȜȟȠȪȬ Ǯǰǿ, Ǯǰǿ, ..., Ȏ 6ǻ – ǮǰǿǮǿǰ, ǮǰǿǮǿǰ, ... . ǻȎȓȟȠȓȟȠȐȓțțȜȗȝȜȐȓȞȣțȜȟȠȖȘȞȖȟȠȎșșȜȐ6ǻ-SiC ȐȟȓȑȒȎ

ȅȎȟȠȪ I, DZșȎȐȎ 5

103

 

 

ȖȚȓȬȠȟȭȡȥȎȟȠȘȖ, ȝȞȖțȎȒșȓȔȎȧȖȓȝȜȟșȓȒȜȐȎȠȓșȪțȜȟȠȭȚǮǰǿȖǮǿǰ. ȋȠȜ ȝȞȖȐȜȒȖȠ Ș ȠȜȚȡ, ȥȠȜ țȎ ȠȎȘȜȗ ȝȜȐȓȞȣțȜȟȠȖ ȘȞȖȟȠȎșșȜȐ ȐȩȞȎȟȠȎȬȠ ȒȐȜȗțȖȘȜȐȩȓ ȝșȓțȘȖ 3C-SiC. dzȟșȖ ȝȜȒșȜȔȘȖ ȜȏȞȎȏȜȠȎțȩ ȝȜȒ ȡȑșȜȚ Ș ȝșȜȟȘȜȟȠȖ (0001), ȠȜ ȞȓȕȘȜ ȡȐȓșȖȥȖȐȎȓȠȟȭ ȝșȜȠțȜȟȠȪ ȟȠȡȝȓțȓȘ. ǮȠȜȚȩ, ȝȜȟȠȡȝȎȬȧȖȓ țȎ ȝȜȒșȜȔȘȡ, ȚȖȑȞȖȞȡȬȠ ȝȜ ȝȜȐȓȞȣțȜȟȠȖ Ș ȟȠȡȝȓțȪȘȎȚ, Ȗ ȠȎȘȖȚ ȜȏȞȎȕȜȚ ȜȟȡȧȓȟȠȐșȭȓȠȟȭ ȝȓȞȓȒȎȥȎ ȟȠȞȡȘȠȡȞțȜȗ ȖțȢȜȞȚȎȤȖȖ. ǽȜȒȑȜȠȜȐȘȎ ȝȜȒșȜȔȓȘ ȕȎȘșȬȥȎȓȠȟȭ Ȑ ȦșȖȢȜȐȘȓ, ȝȜșȖȞȜȐȘȓ Ȗ ȠȞȎȐșȓțȖȖ Ȓșȭ ȝȜșȡȥȓțȖȭ ȞȎȕȜȞȖȓțȠȎȤȖȖ ȝȜȒ ȡȑșȜȚ

B_1.5 6° Ș ȝȜȐȓȞȣțȜȟȠȖ (0001)Si [20].

4H Ȗ 6H-SiC țȎ 6H-SiC ȝȜȒșȜȔȘȎȣ. Ǹ țȎȟȠȜȭȧȓȚȡ ȐȞȓȚȓțȖ ȜȏȨȓȚțȩȓ ȘȞȖȟȠȎșșȩ 4H Ȗ 6H-SiC ȝȜșȡȥȎȬȠ ȖșȖ ȚȓȠȜȒȜȚ PVT ȖșȖ, Ȑ ȕțȎȥȖȠȓșȪțȜ ȏȜșȓȓ țȖȕȘȜȚ ȝȞȜȚȩȦșȓțțȜȚ ȜȏȨȓȚȓ, ȐȩȟȜȘȜȠȓȚȝȓȞȎȠȡȞțȩȚȣȖȚȖȥȓȟȘȖȚȜȟȎȔȒȓțȖȓȚȝȎȞȎHigh Temperature Chemical Vapor Deposition (HTCVD) [22 26] (pȖȟ. 5.2).

ǰ ȝȜȟșȓȒțȖȓ ȑȜȒȩ ȒȜȟȠȖȑțȡȠ ȐȝȓȥȎȠșȭȬȧȖȗ ȝȞȜȑȞȓȟȟ Ȑ ȜȏșȎȟȠȖ ȞȜȟȠȎSiC ȚȓȠȜȒȜȚPVT. ǼȒțȎȘȜ, ȝȞȜȏșȓȚȩȐȟȓȓȧȓȜȟȠȎȬȠȟȭ. ǻȎȝȞȖȚȓȞ, ȝȜȘȎȕȎțȜ, ȥȠȜ ȝȞȖ ȖȟȝȜșȪȕȜȐȎțȖȖ ȚȓȠȜȒȎ PVT ȟȠȓȣȖȜȚȓȠȞȖȭ ȖȕȚȓțȭȓȠȟȭ ȐȒȜșȪ ȜȟȖ ȞȜȟȠȎ Ȗ ȝȜ ȒȖȎȚȓȠȞȡ ȟșȖȠȘȎ. ȋȠȜ ȝȞȖȐȜȒȖȠ Ș ȐȎȞȖȎȤȖȖ ȫșȓȘȠȞȖȥȓȟȘȖȣ ȣȎȞȎȘȠȓȞȖȟȠȖȘ Ȗ

 

ȟȝȓȘȠȞȎ ȑșȡȏȜȘȖȣ șȜȐȡȦȓȘ [27].

 

ǸȜțȤȓțȠȞȎȤȖȭ ȜȟȠȎȠȜȥțȩȣ ȝȞȖ-

 

Țȓȟȓȗ, ȜȟȜȏȓțțȜȎȕȜȠȎȖȏȜȞȎ, ȜȝȞȓ-

 

ȒȓșȭȓȠȟȭ ȥȖȟȠȜȠȜȗ ȖȟȠȜȥțȖȘȎ SiC

 

Ȗ ȜȟȠȎȓȠȟȭ ȟȞȎȐțȖȠȓșȪțȜ ȐȩȟȜȘȜȗ

 

1015 1016 ȟȚ 3. ǶțȠȓȞȓȟȘȚȓȠȜȒȡ

 

CVD ȐȩȕȩȐȎȓȠȟȭȠȓȚ, ȥȠȜȫȠȖțȓȒȜ-

 

ȟȠȎȠȘȖȚȜȑȡȠȏȩȠȪȡȟȠȞȎțȓțȩ, ȠȎȘ

 

ȘȎȘ ȟȜȟȠȎȐ ȑȎȕȜȐȜȗ ȟȞȓȒȩ ȚȜȔȓȠ

 

ȘȜțȠȞȜșȖȞȜȐȎȠȪȟȭȐȜȐȞȓȚȭȞȜȟȠȎ,

 

ȎȥȖȟȠȜȠȎȚȎȠȓȞȖȎșȎȚȜȔȓȠȏȩȠȪ

 

ȟȡȧȓȟȠȐȓțțȜȡșȡȥȦȓțȎ. ȋȠȖȝȞȓ-

 

ȖȚȡȧȓȟȠȐȎȝȞȜȒȓȚȜțȟȠȞȖȞȜȐȎțȩ

 

Ȑ ȠȓȣțȖȘȓ HTCVD ȝȞȖ ȐȩȞȎȧȖ-

ǾȖȟ.5.2.ǿȣȓȚȎȞȓȎȘȠȜȞȎ(HTCVD)[24]:

ȐȎțȖȖ ȜȏȨȓȚțȩȣ ȘȞȖȟȠȎșșȜȐ SiC

1 – ȕȎȠȞȎȐȜȥțȩȗ ȘȞȖȟȠȎșș, 2 – ȒȓȞȔȎ-

ȝȞȖ ȠȓȚȝȓȞȎȠȡȞȎȣ 2200 2300°C

ȠȓșȪ ȘȞȖȟȠȎșșȎ, 3 – ȠȓȞȚȜȖȕȜșȭȤȖȭ,

ȟ ȖȟȝȜșȪȕȜȐȎțȖȓȚ ȟȖșȎțȎ Ȗ ȝȞȜ-

4 – ȐȐȜȒ SiCl4+Ar, 5 – ȐȐȜȒ H2+C3H8,

ȝȎțȎ. ǰȩȟȜȘȖȓȠȓȚȝȓȞȎȠȡȞȩȞȜȟȠȎ

5 – ȐȩȐȜȒ ȑȎȕȜȐȜȗ ȟȚȓȟȖ

ȜȏȓȟȝȓȥȖȐȎȬȠ ȐȩȟȜȘȡȬ ȟȘȜȞȜȟȠȪ

104 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ȞȜȟȠȎ, ȟȞȎȐțȖȚȡȬȟPVT. ǸȜțȤȓțȠȞȎȤȖȭȜȟȠȎȠȜȥțȩȣȝȞȖȚȓȟȓȗțȖȔȓ, ȥȓȚ Ȑ ȘȞȖȟȠȎșșȎȣ ȐȩȞȎȧȓțțȩȣ ȚȓȠȜȒȜȚ PVT. ǸȞȖȟȠȎșșȩ ȝȜ ȫșȓȘȠȞȖȥȓȟȘȖȚ ȝȎȞȎȚȓȠȞȎȚ ȖȚȓȬȠ ȣȜȞȜȦȡȬ ȜȒțȜȞȜȒțȜȟȠȪ. ǼȒțȎȘȜ țȖȕȘȎȭȠȓȞȚȖȥȓȟȘȎȭȡȟȠȜȗȥȖȐȜȟȠȪȟȖșȎțȎȡȐȓșȖȥȖȐȎȓȠȐȓȞȜȭȠțȜȟȠȪ ȝȎȞȎȕȖȠțȩȣ ȝȞȓ-ȞȓȎȘȤȖȗ Ȑ ȑȎȕȜȐȜȗ ȢȎȕȓ.

ǾȎȕȐȖȠȖȓȚ ȫȠȜȑȜ ȚȓȠȜȒȎ ȭȐșȭȓȠȟȭ ȚȓȠȜȒ ȑȎșȜȖȒțȜȑȜ ȣȖȚȖȥȓȟ-

ȘȜȑȜ ȜȟȎȔȒȓțȖȭ (Halide Chemical Vapor Deposition – HCVD). ǰ țȓȚ ȖȟȝȜșȪȕȡȬȠȟȭ ȠȓȞȚȖȥȓȟȘȖ ȟȠȎȏȖșȪțȩȓ ȝȞȓȘȡȞȟȜȞȩ, ȥȠȜ ȡȟȠȞȎțȭȓȠ ȝȞȓ-ȞȓȎȘȤȖȖ[28, 29]. ǰȞȎȏȜȠȓ[29] ȟȜȜȏȧȎȓȠȟȭ, ȥȠȜȑȎșȜȖȒțȩȚCVD ȚȓȠȜȒȜȚȝȜșȡȥȓțȩȜȏȨȓȚțȩȓ4H- Ȗ6H-SiC ȘȞȖȟȠȎșșȩȟȜȥȓțȪțȖȕȘȜȗ ȘȜțȤȓțȠȞȎȤȖȓȗȎȕȜȠȎȖȏȜȞȎ< 1015 ȟȚ 3. ǿȘȜȞȜȟȠȪȞȜȟȠȎȟȜȟȠȎȐșȭșȎ ȒȜ250 300 ȚȘȚ/ȥȎȟ. ǽȜȘȎȕȎțȎȐȜȕȚȜȔțȜȟȠȪȝȜșȡȥȓțȖȭȘȞȖȟȠȎșșȜȐ ȠȜșȧȖțȜȗȒȜ5 ȚȚȖȒȖȎȚȓȠȞȜȚ50, 75 ȚȚȟȝșȜȠțȜȟȠȪȬ ȒȖȟșȜȘȎȤȖȗ ȝȜȞȭȒȘȎ 104 ȟȚ 2 Ȗ ȚȖȘȞȜȠȞȡȏȜȘ Țȓțȓȓ 5 ȟȚ 2.

ǰȞȎȏȜȠȓ [30] ȝȜȘȎȕȎțȜ, ȥȠȜ CVD ȞȜȟȠ SiC țȎ ȝȜȞȖȟȠȩȣ ȝȜȒșȜȔȘȎȣ SiC ȚȜȔȓȠ ȝȞȖȐȓȟȠȖ Ș ȟțȖȔȓțȖȬ ȝșȜȠțȜȟȠȖ ȒȖȟșȜȘȎȤȖȗ Ȑ ȫȝȖȠȎȘȟȖȎșȪțȩȣȟșȜȭȣ. ȋȠȜȟȜȝȞȜȐȜȔȒȎȓȠȟȭȟțȖȔȓțȖȓȚȖțȠȓțȟȖȐțȜȟȠȖ ȝȖȘȜȐ ȒȓȢȓȘȠțȜȗ șȬȚȖțȓȟȤȓțȤȖȖ L1 _2.901 ȫǰ Ȗ ȐȜȕȞȎȟȠȎțȖȓȚ ȖțȠȓțȟȖȐțȜȟȠȖȝȞȖȘȞȎȓȐȜȗșȬȚȖțȓȟȤȓțȤȖȖȐțȖȕȘȜȠȓȚȝȓȞȎȠȡȞțȜȚ ȟȝȓȘȠȞȓ ȢȜȠȜșȬȚȖțȓȟȤȓțȤȖȖ [31,32].

ǾȜȟȠ 4ǻ- Ȗ 6ǻ-SiC ȟșȜȓȐ ȜȏȩȥțȜ ȝȞȜȖȕȐȜȒȖȠȟȭ țȎ ȕȎȠȞȎȐȘȎȣ ȞȎȕȜȞȖȓțȠȖȞȜȐȎțțȩȣ ȜȠțȜȟȖȠȓșȪțȜ ȝșȜȟȘȜȟȠȖ (0001), ȥȠȜ ȜȏȓȟȝȓȥȖȐȎȓȠȡȟșȜȐȖȭȒșȭȑȜȚȜȫȝȖȠȎȘȟȖȖȖȝȜȕȐȜșȭȓȠȖȕȏȓȔȎȠȪȜȏȞȎȕȜȐȎțȖȭ ȞȭȒȎ ȒȓȢȓȘȠȜȐ (ȜȏȩȥțȜ ȠȞȓȣȑȞȎțțȩȣ), ȣȎȞȎȘȠȓȞțȩȣ Ȓșȭ ȫȝȖȠȎȘȟȖȖ SiC [33, 34]. Dzșȭ ȠȎȘȜȗ ȫȝȖȠȎȘȟȖȖ ȖȟȝȜșȪȕȡȓȠȟȭ ȠȓȞȚȖț ȟȠȡȝȓț- ȥȎȠȩȗȞȜȟȠ(step-flow growth). ǽȞȖȫȠȜȚȜȥȓțȪȥȎȟȠȜțȎȏșȬȒȎȓȠȟȭȜȏȨȓȒȖțȓțȖȓȥȎȟȠȖȚȎșȩȣȟȠȡȝȓțȓȗȐȏȜșȪȦȖȓȟȠȡȝȓțȪȘȖȟ ȡȐȓșȖȥȓțțȜȗ ȐȩȟȜȠȜȗȟȠȡȝȓțȓȘ. ȋȠȜȠȫȢȢȓȘȠțȎȕȩȐȎȬȠȑȞȡȝȝȖȞȜȐȎțȖȓȚȟȠȡȝȓțȓȘ (step-bunching). ǼțȐșȖȭȓȠțȎȘȎȥȓȟȠȐȜȫȝȖȟșȜȓȐ, ȐȥȎȟȠțȜȟȠȖ, țȎ ȜȒțȜȞȜȒțȜȟȠȪ șȓȑȖȞȜȐȎțȖȭ. ȋȢȢȓȘȠ ȑȞȡȝȝȖȞȜȐȎțȖȭ ȟȠȡȝȓțȓȘ ȟȖșȪțȜ ȕȎȐȖȟȖȠ ȜȠ ȜȞȖȓțȠȎȤȖȖ ȝȜȒșȜȔȘȖ Ȗ ȐȜȕȞȎȟȠȎȓȠ ȟ ȡȐȓșȖȥȓțȖȓȚ ȡȑșȎ ȞȎȕȜȞȖȓțȠȎȤȖȖȝșȜȟȘȜȟȠȖȝȜȒșȜȔȘȖȜȠțȜȟȖȠȓșȪțȜȝșȜȟȘȜȟȠȖ(0001). ǰȩȟȜȠȎȟȠȡȝȓțȓȘȐȜȕȞȎȟȠȎȓȠȟȡȐȓșȖȥȓțȖȓȚȡȑșȎȜȠȘșȜțȓțȖȭȝȜȒșȜȔȘȖ. ǾȎȕșȖȥȎȬȠȚȎșȩȓȚȎȘȞȜȟȠȡȝȓțȪȘȖ, ȜȏȞȎȕȜȐȎțțȩȓțȓȟȘȜșȪȘȖȚȖ ȟȠȡȝȓțȪȘȎȚȖ ȟ Ȝȏȧȓȗ ȐȩȟȜȠȜȗ (ȜȒȖț Si-C ȏȖȟșȜȗ) Ȗ ȚȎȘȞȜȟȠȡȝȓțȪȘȖ ȟȜȟȠȜȭȧȖȓ Ȗȕ ȏȜșȪȦȜȑȜ ȥȖȟșȎ ȚȎȘȞȜȟȠȡȝȓțȓȘ.

ǰșȎȏȜȞȎȠȜȞȖȖ NASA Lewis ȞȎȕȞȎȏȜȠȎțȎ ȠȓȣțȜșȜȑȖȭ ȠȜȥțȜȑȜ șȓȑȖȞȜȐȎțȖȭȫȝȖȠȎȘȟȖȎșȪțȩȣ ȝșȓțȜȘSiC. ȁȟȠȎțȜȐșȓțȜ, ȥȠȜȜȠțȜȦȓ-

ȅȎȟȠȪ I, DZșȎȐȎ 5

105

 

 

țȖȓ Si/C ȝȜȠȜȘȜȐȝȞȖȫȝȖȠȎȘȟȖȎșȪțȜȚCVD ȞȜȟȠȓȚȜȔȓȠȖȟȝȜșȪȕȜȐȎȠȪȟȭȒșȭȘȜțȠȞȜșȭȐȐȓȒȓțȖȭȝȞȖȚȓȟȓȗȖ, ȟȜȜȠȐȓȠȟȠȐȓțțȜ, ȫșȓȘȠȞȖȥȓȟȘȖȣ ȝȎȞȎȚȓȠȞȜȐ ȐȩȞȎȧȖȐȎȓȚȜȑȜ ȫȝȖȠȎȘȟȖȎșȪțȜȑȜ ȟșȜȭ. ȋȠȜȠ ȝȞȜȤȓȟȟ, țȎȕȩȐȎȓȚȩȗ site-competition epitaxy (SCE), ȝȜȕȐȜșȭȓȠ ȝȞȜȐȜȒȖȠȪ ȘȜțȠȞȜșȖȞȡȓȚȜȓ șȓȑȖȞȜȐȎțȖȓ Ȗ ȝȜșȡȥȎȠȪ ȫȝȖȠȎȘȟȖȎșȪțȩȓ ȝșȓțȘȖ ȘȎȘ țȖȕȘȜșȓȑȖȞȜȐȎțțȩȓ, ȠȎȘ Ȗ ȟ ȐȩȟȜȘȜȗ ȘȜțȠȞȜșȖȞȡȓȚȜȗ ȘȜțȤȓțȠȞȎȤȖȓȗȝȞȖȚȓȟȖ. ȂȖȕȖȥȓȟȘȎȭȚȜȒȓșȪSCE ȜȟțȜȐȎțȎțȎȘȜțȘȡȞȓțȤȖȖ ȚȓȔȒȡ ȚȜșȓȘȡșȎȚȖ SiC Ȗ șȓȑȖȞȡȬȧȓȑȜ ȫșȓȚȓțȠȎ ȝȞȖ ȐțȓȒȞȓțȖȖ Ȗȣ

ȐȞȓȦȓȠȘȡțȎȝȜȐȓȞȣțȜȟȠȖȘȞȖȟȠȎșșȎSiC. ǰȐȓȒȓțȖȓȝȞȖȚȓȟȖȘȜțȠȞȜșȖȞȡȓȠȟȭ ȐȩȏȜȞȜȚ ȜȠțȜȦȓțȖȭ Si/C ȐțȡȠȞȖ ȞȓȎȘȠȜȞȎ. ȋȠȜ ȝȜȕȐȜșȭȓȠ ȐșȖȭȠȪ țȎ ȘȜșȖȥȓȟȠȐȜ șȓȑȖȞȡȬȧȖȣ ȎȠȜȚȜȐ ȝȞȖȚȓȟȖ ȐțȓȒȞȭȬȧȖȣȟȭ

ȐȟȜȜȠȐȓȠȟȠȐȡȬȧȖȓȟȜȟȠȜȭțȖȭȘȞȖȟȠȎșșȖȥȓȟȘȜȗȞȓȦȓȠȘȖ, șȖȏȜȟȜȟȠȜȭțȖȭ ȡȑșȓȞȜȒțȜȗ ȞȓȦȓȠȘȖ (C-ȟȜȟȠȜȭțȖȭ), șȖȏȜ ȘȞȓȚțȖȓȐȜȗ ȞȓȦȓȠȘȖ (Si-ȟȜȟȠȜȭțȖȭ) țȎȝȜȐȓȞȣțȜȟȠȖȞȎȟȠȡȧȓȑȜȘȞȖȟȠȎșșȎ. ȀȎȘȖȚȜȏȞȎȕȜȚ, ȚȜȒȓșȪ ȜȟțȜȐȎțȎ țȎ ȘȜțȘȡȞȓțȤȖȖ ȚȓȔȒȡ ȎȕȜȠȜȚ Ȗ ȡȑșȓȞȜȒȜȚ Ȓșȭ C-ȟȜȟȠȜȭțȖȗȖȚȓȔȒȡȎșȬȚȖțȖȓȚȖȘȞȓȚțȖȓȚȒșȭSi-ȟȜȟȠȜȭțȖȗ. ǸȜț- ȤȓțȠȞȎȤȖȭșȓȑȖȞȡȬȧȖȣȎȠȜȚȜȐn-ȠȖȝȎ(ȎȕȜȠ), ȘȜȠȜȞȩȓȚȜȑȡȠȕȎțȖȚȎȠȪ ȠȜșȪȘȜC-ȟȜȟȠȜȭțȖȭ, ȐțȓȒȞȭȬȧȖȓȟȭȐȞȎȟȠȡȧȖȗSiC ȫȝȖȠȎȘȟȖȎșȪțȩȗ ȟșȜȗ, ȚȜȔȓȠȏȩȠȪȟțȖȔȓțȎȝȡȠȓȚȝȜȐȩȦȓțȖȭȘȜțȤȓțȠȞȎȤȖȖȡȑșȓȞȜȒȎ ȠȎȘȘȎȘȡȑșȓȞȜȒȘȜțȘȡȞȖȞȡȓȠȟȎȕȜȠȜȚȒșȭȟȜȜȠȐȓȠȟȠȐȡȬȧȖȣƙ-ȟȜȟȠȜȭ- țȖȗ. ǰȜȏȧȓȚȘȜțȤȓțȠȞȎȤȖȭȎȕȜȠȎȐȐȩȞȎȧȖȐȎȓȚȜȚȫȝȖȠȎȘȟȖȎșȪțȜȚ ȟșȜȓȝȞȜȝȜȞȤȖȜțȎșȪțȎȜȠțȜȦȓțȖȬSi/C, ȐȠȜȐȞȓȚȭȘȎȘȘȜțȤȓțȠȞȎȤȖȭ ȎșȬȚȖțȖȭ ȜȏȞȎȠțȜ ȝȞȜȝȜȞȤȖȜțȎșȪțȎ ȫȠȜȚȡ ȜȠțȜȦȓțȖȬ.

ǰȝȜȟșȓȒțȖȓ ȑȜȒȩ ȞȎȕȞȎȏȜȠȎț ȞȭȒ ȘȜțȟȠȞȡȘȤȖȗ ȞȓȎȘȠȜȞȜȐ, ȝȜȕȐȜșȭȬȧȖȣȝȜșȡȥȎȠȪȫȝȖȠȎȘȟȖȎșȪțȩȓȟȠȞȡȘȠȡȞȩȐȩȟȜȘȜȑȜȘȎȥȓȟȠȐȎ. ȋȠȜȞȓȎȘȠȜȞȩȟȑȜȞȭȥȓȗȟȠȓțȘȜȗ(Hot-Wall Reactor), ȝȜȕȐȜșȭȬȧȖȓȝȜșȡȥȎȠȪȒȜȟȠȎȠȜȥțȜȠȜșȟȠȩȓȐȩȟȜȘȜȘȎȥȓȟȠȐȓțțȩȓȟșȎȏȜșȓȑȖȞȜȐȎțțȩȓ ȝșȓțȘȖȟȣȜȞȜȦȓȗȚȜȞȢȜșȜȑȖȓȗȖȐȩȟȜȘȜȗȜȒțȜȞȜȒțȜȟȠȪȬ(ȞȖȟ. 5.2). ǼțȖȜȏȓȟȝȓȥȖȐȎȬȠȜȒțȜȞȜȒțȜȟȠȪȝȜșȓȑȖȞȜȐȎțȖȬȟȠȜȥțȜȟȠȪȬȒȜ 2% ȖȠȜșȧȖțȓȒȜ1%. DzșȭȜȏȓȟȝȓȥȓțȖȭȜȒțȜȞȜȒțȜȟȠȖȖȟȝȜșȪȕȡȓȠȟȭȐȞȎȧȓțȖȓ ȕȎȠȞȎȐȜȥțȜȑȜ ȘȞȖȟȠȎșșȎ. ȂȖȞȚȎ Aixtron [33] ȖȕȑȜȠȎȐșȖȐȎȓȠ ȝșȎțȓȠȎȞțȩȓ ȞȓȎȘȠȜȞȩ (Multiwafer Reactor) ȟ ȣȜșȜȒțȜȗ Ȗ ȑȜȞȭȥȓȗ ȟȠȓțȘȎȚȖȟȜȒțȜȐȞȓȚȓțțȩȚȝȞȜȤȓȟȟȜȚȫȝȖȠȎȘȟȖȖțȎ ȟȓȚȖ2´ ȒȬȗȚȜȐȩȣȝȜȒșȜȔȘȎȣȖșȖȝȭȠȖ3´ ȒȬȗȚȜȐȩȣ. ǽȞȓȒșȜȔȓțȎțȜȐȎȭȘȜțȤȓȝȤȖȭȘȜțȟȠȞȡȘȤȖȖȞȓȎȘȠȜȞȎ[35]. ǼțȎțȎȕȐȎțȎȠȞȡȏȥȎȠȩȚȞȓȎȘȠȜȞȜȚ (The Chimney Reactor). ȋȠȜȠȚȓȠȜȒȝȜȒȜȏȓțȠȓȣțȖȘȓ HTCVD ȠȓȚ, ȥȠȜ ȫȠȜȐȓȞȠȖȘȎșȪțȎȭȘȜțȟȠȞȡȘȤȖȭȖȚȎȟȟȜȝȓȞȓțȜȟȚȜȔȓȠȜȟȡȧȓȟȠȐșȭȠȪ-

106 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ȟȭ ȘȞȡȝțȩȚȖ ȘșȎȟȠȓȞȎȚȖ Si. ǾȓȎȘȠȜȞȩ ȫȠȜȑȜ ȠȖȝȎ ȜȏȓȟȝȓȥȖȐȎȬȠ ȐȩȟȜȘȡȬ ȟȘȜȞȜȟȠȪ ȞȜȟȠȎ 15 50 ȚȘȚ/ȥȎȟ Ȗ țȖȕȘȡȬ ȘȜțȤȓțȠȞȎȤȖȬ ȝȞȖȚȓȟȓȗ 1013 ȟȚ 3 [36].

5.3.ǰȩȞȎȧȖȐȎțȖȓ ȘȞȖȟȠȎșșȜȐ

ȖțȎțȓȟȓțȖȓ ȕȎȧȖȠțȩȣ ȝȜȘȞȩȠȖȗ

Dzșȭ ȐȩȞȎȧȖȐȎțȖȭ 3C-SiC ȘȞȖȟȠȎșșȜȐ Ȗ țȎțȓȟȓțȖȭ ȕȎȧȖȠțȩȣ ȝȜȘȞȩȠȖȗ țȎ ȖȕȒȓșȖȭ Ȗȕ ȑȞȎȢȖȠȎ ȖȟȝȜșȪȕȡȓȠȟȭ ȜȒțȎ Ȗȕ ȞȎȕțȜȐȖȒțȜȟȠȓȗ CVD-ȚȓȠȜȒȎ. ǽȞȖ ȫȠȜȚ ȝȞȖȚȓțȭȓȠȟȭ, ȘȎȘ ȝȞȎȐȖșȜ, ȝȞȜȤȓȟȟ ȠȓȞȚȖȥȓȟȘȜȑȜ ȐȜȟȟȠȎțȜȐșȓțȖȭ ȚȓȠȖșȠȞȖȣșȜȞȟȖșȎțȎ Ȑ ȐȜȒȜȞȜȒȓ țȎ țȎȑȞȓȠȜȗ ȑȞȎȢȖȠȜȐȜȗ țȖȠȖ ȖșȖ ȖȕȒȓșȖȖ [37 41]. ȀȓȚȝȓȞȎȠȡȞȎ ȑȞȎȢȖȠȜȐȜȗ ȒȓȠȎșȖ ȭȐșȭȓȠȟȭ ȜȒțȖȚ Ȗȕ ȜȟțȜȐțȩȣ ȝȎȞȎȚȓȠȞȜȐ, ȜȝȞȓȒȓșȭȬȧȖȣȘȞȖȟȠȎșșȖȥȓȟȘȡȬȟȠȞȡȘȠȡȞȡ. ǰȠȓȚȝȓȞȎȠȡȞțȜȚȖțȠȓȞȐȎșȓ 900 1000°ǿȢȜȞȚȖȞȡȬȠȟȭȎȚȜȞȢțȩȓȝșȓțȘȖȘȎȞȏȖȒȎȘȞȓȚțȖȭ, Ȑ ȖțȠȓȞȐȎșȓȠȓȚȝȓȞȎȠȡȞ1000 1500°ǿȜȏȞȎȕȡȬȠȟȭȝȜșȖȘȞȖȟȠȎșșȖȥȓȟȘȖȓ ȟșȜȖ SiC Ȗ țȎȘȜțȓȤ, ȝȞȖ Ȁx1600 2000°ǿ ȝȞȜȖȟȣȜȒȖȠ ȕȎȞȜȔȒȓțȖȓ Ȗ ȞȜȟȠȚȜțȜȘȞȖȟȠȎșșȜȐ3C-SiC. ǸȞȜȚȓȠȓȚȝȓȞȎȠȡȞȩȝȜȒșȜȔȘȖ, ȟȘȜȞȜȟȠȪ ȜȟȎȔȒȓțȖȭ SiC ȜȝȞȓȒȓșȭȓȠȟȭ ȟȘȜȞȜȟȠȪȬ ȝȜȠȜȘȎ ȐȜȒȜȞȜȒȎ Ȗ ȘȜșȖȥȓȟȠȐȜȚ ȘȞȓȚțȖȗ- Ȗ ȡȑșȓȞȜȒȟȜȒȓȞȔȎȧȖȣ ȘȜȚȝȜțȓțȠȜȐ Ȑ ȑȎȕȜȐȜȚ ȝȜȠȜȘȓ. ǼȟțȜȐțȩȚȖ ȖȟȠȜȥțȖȘȎȚȖ ȝȜȟȠȡȝșȓțȖȭ ȝȞȖȚȓȟȓȗ ȭȐșȭȬȠȟȭ: ȚȓȠȖșȣșȜȞȟȖșȎț, ȐȜȒȜȞȜȒ, ȎȞȚȎȠȡȞȎȡȟȠȎțȜȐȘȖȖȜȘȞȡȔȎȬȧȎȭȟȞȓȒȎ. ǽȜȫȠȜȚȡ Ȓșȭ ȝȜșȡȥȓțȖȭ ȝȜȘȞȩȠȖȗ Ȗ ȘȞȖȟȠȎșșȜȐ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȜȗ ȥȖȟȠȜȠȩ ȝȞȜȐȜȒȖȠȟȭ ȜȥȖȟȠȘȎ ȘȜȚȝȜțȓțȠȜȐ ȞȓȎȘȤȖȖ Ȗ ȒȓȠȎșȓȗ ȎȞȚȎȠȡȞȩ. ǰ țȎȟȠȜȭȧȓȓ ȐȞȓȚȭ ȫȠȖȚ ȚȓȠȜȒȜȚ ȝȜșȡȥȎȬȠ ȘȞȖȟȠȎșșȩ n-ȠȖȝȎ 3ǿ-SiC ȟ ȘȜțȤȓțȠȞȎȤȖȓȗ țȓȟȘȜȚȝȓțȟȖȞȜȐȎțțȩȣ ȝȞȖȚȓȟȓȗ 3 5¸1016 ȟȚ 3, ȝȜȒȐȖȔțȜȟȠȪȬ ȫșȓȘȠȞȜțȜȐ100 250 ȟȚ2/ǰ¸ȟ. ǾȓȘȜȞȒțȜȓ ȕțȎȥȓțȖȓ ȝȜȒȐȖȔțȜȟȠȖ ȟȜȟȠȎȐșȭȓȠ ȐȓșȖȥȖțȡ ȒȜ1000 ȟȚ2/ǰ¸ȟ. ǽșȜȧȎȒȪ ȘȞȖȟȠȎșșȜȐ țȓ ȝȞȓȐȩȦȎȓȠ ȐȓșȖȥȖțȩ 20 ȚȚ2. ǸȞȖȟȠȎșșȩ 3C-SiC, ȝȜșȡȥȓțțȩȓȞȎȕșȜȔȓțȖȓȚȚȓȠȖșȠȞȖȣșȜȞȟȖșȎțȎȐȐȜȒȜȞȜȒȓ, ȖȚȓȬȠȓȟȠȓȟȠȐȓțțȡȬȜȑȞȎțȘȡ. ȂȜȞȚȎȘȞȖȟȠȎșșȜȐȕȎȐȖȟȖȠȜȠȡȟșȜȐȖȗ ȞȜȟȠȎ. ǮȏȟȜșȬȠțȜȓȏȜșȪȦȖțȟȠȐȜȘȞȖȟȠȎșșȜȐȚȜȔțȜȜȠțȓȟȠȖȘȜȒțȜȚȡ ȖȕȠȞȓȣȜȟțȜȐțȩȣȠȖȝȜȐ: ȝȞȖȕȚȎȠȖȥȓȟȘȜȗ ȢȜȞȚȩ, ȟȘȓșȓȠțȜȗȖȝșȎȟȠȖțȥȎȠȜȗ. ǸȞȖȟȠȎșșȩ ȝȓȞȐȜȑȜȠȖȝȎ ȜȏȩȥțȜ ȐȩȠȭțȡȠȩ ȐȒȜșȪ ȜȒțȜȑȜ țȎȝȞȎȐșȓțȖȭ Ȗ ȖȚȓȬȠ ȜȠ 6 ȒȜ 9 ȑȞȎțȓȗ ȝȟȓȐȒȜȝȞȖȕȚȩ. ǸȞȖȟȠȎșșȩ ȐȠȜȞȜȑȜȠȖȝȎȣȎȞȎȘȠȓȞȖȕȡȬȠȟȭ țȎșȖȥȖȓȚțȓȟȘȜșȪȘȖȣ ȒȐȡȣȑȞȎțțȩȣ ȐȣȜȒȭȧȖȣȡȑșȜȐ, ȠȜȓȟȠȪȏȜșȪȦȖȚȘȜșȖȥȓȟȠȐȜȚȒȐȜȗțȖȘȜȐȩȣ ȟȠȞȡȘȠȡȞ. ǻȎȘȜțȓȤ ȘȞȖȟȠȎșșȩ ȝșȎȟȠȖțȥȎȠȜȑȜ ȠȖȝȎ ȟȝșȬȧȓțȩ ȐȒȜșȪ ȜȒ-

ȅȎȟȠȪ I, DZșȎȐȎ 5

107

 

 

țȜȗ Ȗȕ Ȝȟȓȗ Ȗ ȥȎȧȓ ȐȟȓȑȜ ȖȚȓȬȠ ȢȜȞȚȡ ȑȓȘȟȎȑȜțȎșȪțȩȣ ȝșȎȟȠȖțȜȘ. ǾȓțȠȑȓțȜȐȟȘȖȗ ȎțȎșȖȕ, ȑȜțȖȜȚȓȠȞȖȥȓȟȘȖȓ ȖȕȚȓȞȓțȖȭ Ȗ ȠȞȎȐșȓțȖȓ ȝȜȘȎȕȩȐȎȬȠ, ȥȠȜ ȠȜșȪȘȜ ȘȞȖȟȠȎșșȩ ȝșȎȟȠȖțȥȎȠȜȑȜ ȠȖȝȎ ȭȐșȭȬȠȟȭ ȚȜțȜȘȞȖȟȠȎșșȎȚȖ. ǸȞȖȟȠȎșșȩ ȝȞȖȕȚȎȠȖȥȓȟȘȜȑȜ ȠȖȝȎ ȭȐșȭȬȠȟȭ ȒȐȜȗțȖȘȎȚȖ, ȎȘȞȖȟȠȎșșȩȟȘȓșȓȠțȜȗȢȜȞȚȩ– ȟșȜȔțȩȚȖȒȐȜȗțȖȘȜȐȩȚȖ ȜȏȞȎȕȜȐȎțȖȭȚȖ. ǸȞȖȟȠȎșșȩ ȝșȎȟȠȖțȥȎȠȜȑȜ ȠȖȝȎ ȜȏșȎȒȎȬȠ ȟȓȘȠȜȞȖȎșȪțȩȚ ȟȠȞȜȓțȖȓȚ, ȝȖȞȎȚȖȒȩȞȜȟȠȎȟȜȟȓȒțȖȣ ȑȞȎțȓȗȚȜȑȡȠ ȕțȎȥȖȠȓșȪțȜ ȞȎȕșȖȥȎȠȪȟȭ ȝȜ ȫșȓȘȠȞȖȥȓȟȘȖȚ Ȗ ȜȝȠȖȥȓȟȘȖȚ ȟȐȜȗȟȠȐȎȚ [35 38, 40]. ȀȎȘ Ȓșȭ ȖȕȑȜȠȜȐșȓțȖȭ ȟȐȓȠȜȒȖȜȒȜȐ, țȓȜȏȣȜȒȖȚȜ ȖȟȝȜșȪȕȜȐȎȠȪ ȝȜȐȓȞȣțȜȟȠȪ ȠȜșȪȘȜ ȜȝȞȓȒȓșȓțțȩȣ ȝȖȞȎȚȖȒ ȞȜȟȠȎ ȘȞȖȟȠȎșșȜȐ [42]. ȋȠȜ ȜȑȞȎțȖȥȖȐȎȓȠ ȖȟȝȜșȪȕȜȐȎțȖȓ C-SiC Ȓșȭ ȖȕȑȜȠȜȐșȓțȖȭ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȝȞȖȏȜȞȜȐ.

ǺȓȠȜȒCVD ȝȜȕȐȜșȭȓȠȜȠțȜȟȖȠȓșȪțȜ șȓȑȘȜȝȜșȡȥȎȠȪȘȞȖȟȠȎșșȩ ȘȎȘn-, ȠȎȘȖȞ-ȠȖȝȎȝȞȜȐȜȒȖȚȜȟȠȖ. ǹȓȑȖȞȜȐȎțȖȓȎȕȜȠȜȚȝȞȜȖȕȐȜȒȖȠȟȭ șȖȏȜ ȐȐȓȒȓțȖȓȚ Ȑ ȝȜȠȜȘ ȐȜȒȜȞȜȒȎ N2 (ȘȜțȤȓțȠȞȎȤȖȭ ȫșȓȘȠȞȜțȜȐ ȒȜ1018 ȟȚ 3), șȖȏȜNH3 – ȒșȭȝȜșȡȥȓțȖȭȟȖșȪțȜșȓȑȖȞȜȐȎțțȩȣȟșȜȓȐ. DzșȭșȓȑȖȞȜȐȎțȖȭȎȘȤȓȝȠȜȞțȩȚȖȝȞȖȚȓȟȭȚȖȖȟȝȜșȪȕȡȬȠȟȭAl(C2H5)3, Al(CH3)3 ȖșȖ B2H6. DzȜȐȜșȪțȜ ȦȖȞȜȘȜ ȚȓȠȜȒ CVD ȖȟȝȜșȪȕȡȓȠȟȭ Ȓșȭ țȎțȓȟȓțȖȭ ȕȎȧȖȠțȩȣ SiC ȝȜȘȞȩȠȖȗ țȎ țȎȑȞȓȐȎȠȓșȖ Ȗȕ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ [43] Ȗ ȠȓȣțȜșȜȑȖȥȓȟȘȡȬ ȑȞȎȢȖȠȜȐȡȬ ȜȟțȎȟȠȘȡ, Ȑ ȥȎȟȠțȜȟȠȖ, Ȓșȭ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȜȗ ȝȞȜȚȩȦșȓțțȜȟȠȖ. ȋȠȜ ȚȜȑȡȠ ȏȩȠȪ ȝȖȞȎȚȖȒȩ, ȠȞȡȏȩ, șȜȒȜȥȘȖ Ȗ ȒȞȡȑȖȓ ȜȏȨȓȘȠȩ ȞȎȕșȖȥțȜȗ ȢȜȞȚȩ. ǻȎ ȝȜȐȓȞȣțȜȟȠȪ ȖȕȒȓșȖȭ țȎțȜȟȭȠ ȝșȜȠțȩȗ ȟșȜȗ SiC ȠȜșȧȖțȜȗ ȜȠ 10 ȒȜ 500 ȚȘȚ. ǰ ȞȭȒȓ ȟșȡȥȎȓȐ ȜȟȎȔȒȓțțȩȗ ȟșȜȗ șȓȑȖȞȡȬȠ ȝȞȖȚȓȟȭȚȖ Ȓșȭ ȜȏȞȎȕȜȐȎțȖȭ ȠȜȘȜȝȞȜȐȜȒȭȧȓȗ ȝȜȐȓȞȣțȜȟȠȖ.

108 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ǹȖȠȓȞȎȠȡȞȎ

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3.Kong H.S., Glass J.T., Davis R.F. Growth rate, surface morphology, and defect microstructures of C-SiC Àlms chemically vapour deposited on 6H-SiC substrates // J.Mat.Res. – 1989. – 4, N1B. – P. 204–214.

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8.ǯȓȞȓȔȖțȟȘȖȗ ǹ.Ƕ., ǰșȎȟȘȖțȎ ǿ.Ƕ., ǾȜȒȖȜțȜȐ ǰ.dz., ȆȎȚȡȞȎȠȜȐ ȃ.Ǯ. ǽșȓțȘȖ ȘȡȏȖȥȓȟȘȜȑȜ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ țȎ ȘȞȓȚțȖȓȐȜȗ ȝȜȒșȜȔȘȓ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1989. – 15, Ɋ2. – ǿ. 44–47.

9.ǯȓȞȓȔȖțȟȘȖȗ ǹ.Ƕ., ǰșȎȟȘȖțȎ ǿ.Ƕ., ǾȜȒȖȜțȜȐ ǰ.dz., ǿȐȓȦțȖȘȜȐ ǿ.ǰ., ȆȎȚȡȞȎȠȜȐ ȃ.Ǯ. ǻȎȥȎșȪțȩȓ ȟȠȎȒȖȖ ȞȜȟȠȎ ȫȝȖȠȎȘȖȎșȪțȩȣ ȝșȓțȜȘ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ țȎ ȘȞȓȚțȖȓȐȩȣ ȝȜȒșȜȔ-

ȘȎȣ // ȁȂǴ. – 1989. – 34, Ɋ9. – ǿ. 1404–1409.

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