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COMPEL - The international journal for computation and in electrical and electronic engineering

FE-DD based permittivity tolerance analysis in microwave waveguide filters

Giacomo Guarnieri Giuseppe Pelosi Lorenzo Rossi Stefano Selleri

Article information:

To cite this document:

Giacomo Guarnieri Giuseppe Pelosi Lorenzo Rossi Stefano Selleri, (2008),"FE-DD based permittivity tolerance analysis in microwave waveguide filters", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 27 Iss 6 pp. 1236 - 1248

Permanent link to this document: http://dx.doi.org/10.1108/03321640810905729

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COMPEL

FE-DD based permittivity

27,6

tolerance analysis in microwave

 

1236

waveguide filters

Giacomo Guarnieri

 

 

Galileo Avionica S.p.A. BU Radar Systems Antennas, Campi Bisenzio, Italy, and

 

Giuseppe Pelosi, Lorenzo Rossi and Stefano Selleri

 

Department of Electronics and Telecommunications,

 

University of Florence, Florence, Italy

 

Abstract

 

Purpose – The paper’s aim is to devise a fast method for microwave waveguide filter permittivity

 

tolerance analysis.

 

Design/methodology/approach – A 2D finite elements (FEs) formulation is combined via a Schur

 

complement-based domain decomposition (DD) technique to reduce the tolerance affected part of the

 

analysis to a smaller domain.

 

Findings – The paper shows how to combine FEs and DD in an efficient way for material parameters

 

tolerance analyses in microwave waveguide filters, showing speedup results.

 

Research limitations/implications – The formulation here presented is 2D but can be easily

 

extended to 3D.

 

Originality/value – The application of DD to solve numerically large problem is well-known, the

 

idea and organization of the algorithm to allow iteration on parameter values on a single sub-domain is

 

here proposed.

 

Keywords Finite element analysis, Microwaves, Numerical analysis, Electromagnetism

 

Paper type Research paper

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Vol. 27 No. 6, 2008

pp. 1236-1248

q Emerald Group Publishing Limited 0332-1649

DOI 10.1108/03321640810905729

1. Introduction

Electromagnetic engineering applications require the design of evermore complex systems and devices, encompassing inhomogeneous, possibly exotic, materials and very complex geometrical structures. These kinds of problems can be very accurately handled numerically via, for example, the finite element (FE) method, which is among the most versatile numerical methods available (Silvester and Ferrari, 1996; Pelosi et al., 1998; Martini et al., 2003).

Even if modern computer can easily handle the FE solution of problems of somewhat large dimensions with respect to the working wavelength, in a synthesis procedure, or in a tolerance analysis, the number of subsequent, different, computations required can be so large that the whole process can easily become unaffordable.

In particular, as an example of relevant importance within passive devices, microwave and millimeter-wave waveguide filters may resort to dielectric parts (see, for example Shigesawa et al., 1989; Bui et al., 1984) to achieve the desired performances. These dielectric materials are naturally affected by their own tolerances in their permittivity and permeability values. Understanding how these tolerances reflect on the overall filter behavior is of great relevance to asses the device reliability

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and suitability for a given application. Of course, this does not cover the whole domain of tolerance analyses, since geometrical tolerances are of paramount importance, but material parameter tolerance analysis has the advantage of not requiring a re-meshing of the domain to be taken into account.

Another important class of numerical problems currently under investigation is that of the full wave analysis of large systems. Problems very large with respect to the wavelength can easily be too expensive, computationally, to be handled. To this aim several segmentation techniques, going under the broad class of the domain decomposition (DD) methods have been devised in recent years. These techniques rely on the subdivision of the original, large, problem domain in smaller sub-problems defined over smaller sub-domains of the original one, each of which can be solved separately and then coupled to all the others (Choi-Grogan et al., 1996; Herrera, 2003; Vouvakis and Lee, 2004; Balin et al., 2003; Guarnieri et al., 2006).

This possibility of solving a large problem by subdividing it is exploited in this paper to achieve a different result. If the problem is not so big that it cannot be solved as a whole but a tolerance analyses on the dielectric materials it contains is requested, the application of a DD technique can achieve considerable speedups in the analysis, as it will be shown later on.

The core of the proposed technique is to perform a DD so as to have all the materials interested by the tolerance analysis in a single sub-domain. This is possible since the proposed DD approach is able to take into account also domains which are not simply connected. Then the solution of all the other sub-problems is performed just once, while the solution of the last sub-domain is embedded in an iterative loop performing the tolerance analysis via a Monte-Carlo simulation or some equivalent technique (Robert and Casella, 1999; MacKay, 1998).

Although the proposed technique is fully general in this paper it will be presented for waveguide devices uniform along the E-plane, that can hence be analyzed via a 2D FE implementation limited to the H-plane of the device. Ports are terminated by enforcing a suitable modal expansion (ME), which allows for the straightforward computation of the generalized scattering matrix (GSM) of the device (Pelosi et al., 1998).

This paper is organized as follows. Section 2 will briefly describe the FE-ME technique, while in Section 3 the DD approach will be applied to it. Section 4 will discuss numerical results and Section 5 will draw some conclusions.

2. Finite elements – modal expansion approach

Let us consider a microwave N-port waveguide passive device. Let us assume the walls being of perfect electric or magnetic conductor and let us denote V its volume (Figure 1). The electric field, in V obeys to the vector Helmholtz equation:

1

 

£ E 2 k021rE ¼ 0;

 

7 £ mr

7

ð1Þ

where E is the electric field, 1r the relative electric permittivity and mr the relative

magnetic permeability, both being possibly function of the position within the device. p

k0 ¼ 2pf 10m0 is the free-space wavenumber and f is the frequency.

The problem is fully defined once suitable boundary conditions are imposed on the boundary V of the domain. These can either be Dirichelet-type boundary conditions,

FE-DD based permittivity tolerance

1237

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COMPEL

 

27,6

port

 

 

3

1238

port 1

 

 

Figure 1.

pec

 

Generic multiport device

2

containing an

port

inhomogeneous dielectric

 

which holds on perfect electric conducting surfaces, or Neumann-type boundary conditions, which holds on perfectly magnetic conductors and which are natural in a FE approach.

The most complex boundary condition is that pertaining to the ports. Here, a ME is to be enforced; comprising at least one incident mode at one of the ports and several scattered modes at all ports (Martini et al., 2003).

In the following, for the sake of clarity and brevity, and without any loss of generality, the 2D FE problem of H-plane waveguide device will be analyzed (Pelosi et al., 1998). The problem geometry is hence uniform along one direction, say y, and the H-plane of the device lies on the xz-plane. In this case, since the fundamental TE10 mode used to feed the device has an electric field directed along y, thanks to the device uniformity along y only the Ey component of the electric field exist in the device and only the TEm0 scattered modes are excited into the feeding waveguides.

The full 2D FE-ME formulation can be found in literature (Pelosi et al., 1998) will be reported here very briefly, the key point is that, by building a suitable mesh over the domain V and by expanding the unknown component of the electric field Ey over a set of basis functions defined on an element-by-element basis the weak form of equation (1) can be obtained in the form:

½M&e ¼ 0;

ð2Þ

where e is a vector containing the unknown coefficient of the field expansion over the mesh and [M] is a sparse matrix assembled from the local element matrices.

Equation (2) of course still lacks the boundary conditions at the ports; by naming b a vector containing all the unknown coefficients of the scattered modes expansions at the various ports and by enforcing the boundary condition the system:

h ½D& ½M& i" e #

¼ ½fðeÞ&;

ð3Þ

b

 

 

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is obtained, matrix [D] accounting for the coupling between ME unknowns b and FE unknowns e. The non-null known term accounts for the incident mode feeding the device. This cannot be solved since it contains more unknowns than equations. To solve it the continuity of the electric field tangential to the ports must be explicitly imposed obtaining:

" ½D& ½M&

#" e #

¼

" fðeÞ #;

ð4Þ

A

B

b

 

fðbÞ

 

½ &

½ &

 

 

 

 

where [B] is again a coupling matrix while [A], for orthonormal modes, is the unit matrix.

3. Domain decomposition

If now we consider the problem domain V decomposed into N non-overlapping sub-domains Vi, as in Figure 2, some considerations are possible. First of all unknowns can be grouped according to the sub-domains to which they belong, then, coupling between sub-domains is naturally reduced to a coupling between the linear systems which can be written, separately, on each sub-domain.

Hence, first of all, vector e in equation (4) can be rearranged so as to have unknowns ordered on a sub-domain-by-sub-domain basis as eT ¼ ½eT1 ; eT2 ; . . . ; eTN &, being the generic ei relative to sub-domain Vi. In a first step let us assume that ei comprehends all the unknowns of Vi, hence also the ones on its boundary Vi. This implies that the same boundary unknown may appear twice or more, once for every sub-domain to which it belongs. To overcome the issue of duplicate entries for the unknowns each vector ei can be further decomposed into a vector eTi ¼ ½xTi ; yTi &, where xi contains the inner unknowns (unknowns that are in Vi but not on Vi) and yi contains the border unknowns (those on Vi). All the various yi can be easily condensed into a single y containing all unknowns on all boundaries, canceling out any possible redundancy.

FE-DD based permittivity tolerance

1239

port 1

port3 3

1

4 2

pec

2 port

Figure 2.

Generic multiport device containing an inhomogeneous dielectric whose domain V is subdivided into four non-overlapping sub-domains V1, V2, V3

and V4

COMPEL 27,6

1240

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System (4) can hence be recast in the form:

A

 

0

 

½

0

· · ·

 

0

6

0 &

 

 

 

&

 

 

 

 

 

2 ½

 

M

1

 

0

· · ·

 

0

6

0

 

½

0&

 

M 2

· · ·

 

0

6

 

 

 

.

 

 

. .

 

 

 

.

6

 

 

 

 

 

 

 

 

6 .

 

 

 

 

.

 

 

6 .

 

 

.

 

 

.

 

 

½

.

6

 

 

 

.

 

 

.

 

 

 

&

6 .

 

 

 

 

 

 

. .

6

~

 

 

 

 

 

 

 

 

 

 

 

6

0

&

½

0

 

½

0

· · ·

M N

6 ½

 

&

 

&

 

 

 

½

&

4

 

 

 

 

 

 

 

 

 

 

 

 

6 D Q 1

 

Q 2

· · ·

 

Q N

½B&

 

b

3

 

2 fðeÞ

3

 

P

 

1

32 x1

 

 

1

 

 

 

 

~

 

 

 

 

 

 

 

fðbÞ

7

 

½

&

2

76 x2

7

 

6 fðeÞ

 

P

 

 

6

2

 

7

 

½

&

 

76

 

7

 

6

 

 

7

 

 

.

 

 

76 .

7

¼

6 .

 

7:

5

 

.

 

 

76 .

7

 

.

 

7

ð Þ

 

.

 

 

76

.

7

 

6 .

 

 

 

 

 

 

 

 

6

 

 

7

 

P

 

 

76

 

7

 

6

e

Þ

7

 

N

76 xN

7

 

6 fð

7

 

½

&

76

 

7

 

6

N

 

7

 

 

 

76

y

7

 

6

e

Þ

7

 

½

C

&

76

7

 

6 fð

7

 

 

76

 

7

 

6

y

 

7

 

 

 

 

 

76

 

7

 

6

 

 

7

 

 

 

 

 

54

 

5

 

4

 

 

5

 

Here, each [M] i is relative to the inner unknowns xi of Vi and [P] i and [Q] i represent the interaction between inner and boundary nodes on that same domain. [C] represents the mutual interaction between all boundary nodes. If we explicitly note how all port nodes are on sub-domain boundaries, it is immediately evident that unknowns b are coupled only with unknowns y, hence both ME coupling matrices are reduced to the pair

½ ~ & ½ ~ &

B ; D which is of smaller dimension than the original pair.

Finally, the solution of equation (5) can then be obtained using a sort of Gaussian elimination based on the concept of Schur complement method (Saad, 2000). The Schur complement [S] can be computed, for a block system like equation (5) as:

X

 

 

 

 

 

 

N

 

 

 

 

 

 

½S& ¼ ½C& 2 ½Q&i½M

21

 

~

21

~

ð6Þ

 

&i½P&i 2 ½DA&

 

½B&;

1

where the summation must be intended as the assembling of local matrices in the global one.

The global system can then be solved with respect to the interface unknowns only:

X

 

 

N

2 ½D~ A&21fðbÞ;

 

½S&y ¼ fyðeÞ 2 ½Q&i½M21&ifiðeÞ

ð7Þ

1

 

 

where the ½Q&i½M21&i½fði& matrices are assembled from local sub-domains, as for the Schur complement matrix equation (6). Once vector y is known, all the local subproblems can be solved, for the internal unknowns, from the Dirichelet boundary condition represented by the now known vector y:

xi ¼ ½M21&i fiðeÞ 2 ½P&iy :

ð8Þ

While the GSM can be obtained from:

 

b ¼ ½A&21ðfðbÞ 2 ½B~ &yÞ:

ð9Þ

This latter is the most useful of the outputs since it yields the GSM of the device and, moreover, is cheaper to compute than any of the equations (8) since [A] is diagonal.

The key point of the proposed technique is to perform a domain subdivision so as to keep all tolerance-affected dielectrics in one domain, namely the last, then compute

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equations (6) and (7) for all the other sub-domains to obtain a partial Schur complement. Then, within the iterative cycle, the complete Schur complement is computed, the system solved and the GSM computed.

4. Numerical results

The method discussed in the previous sections has been used to perform some analyses of the statistical behavior of microwave filters affected by tolerances on the value of the permittivity of their dielectric parts.

First the nominal response of the filter has been computed by assuming that the dielectrics exhibit their proper, nominal, value for the permittivity; then a series of simulations have been carried out, in the framework of a Monte-Carlo approach (Robert and Casella, 1999; MacKay, 1998) performed over a series of simulations in which the material parameters assume a possible value within their tolerance ranges. From the set of scattering parameters obtained a mean mS21 value of the S21 parameter, as well as its standard deviation sS21 , is computed.

Taking into account that, in a Gaussian distribution, 95 percent of samples are included in the range m ^ 2s, a suitable representation of the possible values for S21 can be achieved by plotting curve corresponding to mS21 as well as the two curves

mS21 þ 2sS21 and mS21 2 2sS21 . These will be presented in the following graphs. It is anyway worth noticing that the resulting statistical distribution for S21 is not

Gaussian, especially in the band-pass zone, where for physical reasons S21 can never be greater than 1 (or 0 dB) and the standard deviation, which is linked to the distance between the samples and their mean value, can anyway assume relatively large values. This implies that, mathematically and without any infringement of physical properties of passive devices, mS21 þ 2sS21 can be greater than one, hence letting the pertinent curve to go beyond the boundary of the graphs.

Since, the Monte-Carlo technique heavily relies on a large amount of different evaluations of the filter response any possible acceleration of its computation is highly appreciated. The efficiency of the proposed DD approach is here established and reported.

The first geometry analyzed is a broad band E-plane bandpass filter consisting of metal strips fabricated on a dielectric substrate inserted along the E-plane of a WR6 rectangular waveguide (Figure 3). Such a structure has been firstly presented in Bui et al. (1984). Please note that, since the dielectric metallized slab is inserted along the E-plane the device is actually uniform in that plane and can hence be analyzed in the H-plane.

FE-DD based permittivity tolerance

1241

1

0.03175

0.3365

0.4318

0.4318

0.3365

0.03175

1.651

0.0762

εr

0.8989

 

0.8992

0.8989

0.887

 

 

0.887

 

 

 

 

2

 

 

 

 

 

pec

 

 

 

 

 

 

Note: Domain decomposition is done in two domains, one comprising only air, the other comprising the dielectric slab

Figure 3.

H-plane section of a millimeter-wave E-plane broadband filter

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COMPEL

The tolerance analysis has been performed considering

two different

types of

27,6

substrate, a PTFE-based laminate characterized by

a dielectric

constant

1r ¼ 2.2 ^ 0.04 and a ceramic laminate characterized by 1r

¼ 3.02 ^ 0.05.

 

 

 

 

For the DD analysis, the whole domain has been decomposed in two sub-domains:

 

V1 comprising the entire vacuum, and V2 comprising only the dielectric slab whose

1242

relative permittivity is affected by tolerances. In this way, the variations are enclosed

on the V2 sub-domain only. Metal strips are assumed infinitely thin in this analysis.

The nominal response of the filter are shown in Figures 4 and 5 for 1r ¼ 2.2 and 1r ¼ 3.02 case, respectively.

The tolerance analysis has been performed in the pass band considering 22 values for the dielectric constant randomly generated in their respective range of variations.

Figure 4.

Nominal response of the filter in Figure 3 when the slab permittivity is

1r ¼ 2.2

Figure 5.

Nominal response of the filter in Figure 3 when the slab permittivity is

1r ¼ 3.02

 

0

 

 

 

 

 

 

 

– 10

 

 

 

 

 

 

[dB]

– 20

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

– 30

 

 

 

 

 

 

– 40

 

 

 

 

 

 

21

 

 

 

 

 

 

S

 

 

 

 

 

 

 

 

– 50

 

 

 

 

 

 

 

– 60

135

140

145

150

155

160

 

130

Frequency [GHz]

Note: The dotted box highlights the area which will be zoomed in the tolerance analysis results

 

0

 

 

 

 

 

 

 

– 10

 

 

 

 

 

 

[dB]

– 20

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

– 30

 

 

 

 

 

 

– 40

 

 

 

 

 

 

21

 

 

 

 

 

 

S

 

 

 

 

 

 

 

 

– 50

 

 

 

 

 

 

 

– 60

135

140

145

150

155

160

 

130

Frequency [GHz]

Note: The dotted box highlights the area which will be zoomed in the tolerance analysis results

0
– 2

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The mean mS21 curve and the mS21 ^ 2sS21 curves are calculated and the results are shown in Figures 6-7.

It is apparent how the response of this kind of filter is relatively stable with respect to permittivity tolerances in band, the ripple being unspoiled, while the bandwidth variation might pose an issue.

An estimate of the time needed for the FE analysis and the DD analysis is shown in Figure 8. It can be appreciated the higher computational efficiency of the method proposed in this paper. In this figure, the computing time attained on an Intel Celeron 1.4 GHz 512 MB RAM are reported. These times are not relevant in their absolute values, which depend on the machine available, but rather in their relative value,

FE-DD based permittivity tolerance

1243

[dB]

– 4

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

– 6

 

 

 

 

 

 

– 8

 

 

 

 

 

 

 

 

 

 

 

 

 

21

– 10

 

 

 

 

 

 

S

Nominal value

 

 

 

 

 

 

 

– 12

mS21

±2sS

 

 

 

 

 

mS

21

21

 

 

 

– 14

 

 

145

150

155

 

140

 

 

Frequency [GHz]

Notes: Solid line: nominal filter results; dashed line, mean value of the statistical results; dotted lines, bounding values mS21±2sS21

Figure 6.

Statistical behavior of the amplitude of the S21 parameter,

1r ¼ 2.2 ^ 0.04 case

 

0

 

 

 

 

 

– 2

 

 

 

 

[dB]

– 4

 

 

 

 

Parameter

 

 

 

 

– 6

 

 

 

 

21

 

 

 

 

 

S

 

 

 

 

 

 

– 8

Nominal value

 

mS21

 

 

 

 

 

 

mS

21

±2sS

21

 

– 10

 

 

 

 

138

140

142

144

146

148

150

 

 

Frequency [GHz]

 

 

 

Notes: Solid line: nominal filter results; dashed line, mean value of the statistical results; dotted lines, bounding values mS21±2sS21

Figure 7.

Statistical behavior of the amplitude of the S21 parameter,

1r ¼ 3.02 ^ 0.05 case

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COMPEL 27,6

1244

Figure 8.

Computing time curves for the FE only tolerance analysis (dashed line) and the FE þ DD one (solid line) as a function of the number of iterations

 

450

 

FE

 

 

 

 

 

 

 

 

 

400

 

 

 

 

 

 

 

 

 

 

 

FE+DD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

350

 

 

 

 

 

 

 

 

 

 

[s]

300

 

 

 

 

 

 

 

 

 

 

time

 

 

 

 

 

 

 

 

 

 

250

 

 

 

 

 

 

 

 

 

 

Computing

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

0

10

20

30

40

50

60

70

80

90

100

 

1

Number of iterations N

which is machine independent. The FE þ DD line is much less steep, showing that the proposed FE þ DD technique is more advantageous for higher numbers of simulations. In particular, for the above presented case, with N ¼ 22, the FE-DD analysis is 4.3 times faster than the conventional FE based one.

It is also worth noticing that the overhead due to the DD partitioning and the computation of the Schur complement makes the FE-DD method to be slower than the FE only technique when iterations are few (less than 4 or 5, for the present not fully optimized implementation).

The second geometry analyzed is a band pass filter consisting of two parallel cut-off waveguide paths with dielectric quartz resonators (Figure 9). The geometry of this filter was firstly presented in Shigesawa et al. (1989). The rectangular WR90 waveguide is subdivided by a thin metallic sheet into two waveguides which are in cut-off if considered in empty space. The two cut-off waveguides are then unevenly filled with dielectric as reported in the figure.

For the DD analysis, the whole domain has been decomposed in two sub-domains none of which simply connected: V1, comprising the entire vacuum, and V2, comprising

Figure 9.

Band pass filter consisting of two parallel waveguides loaded with dielectric resonators (dimensions in millimeters)

 

4

13.3

4

 

4

 

 

 

 

 

13.3

 

1

εr

1

 

 

1

11.8

 

 

εr

εr

22.9

2

pec

2

2

0.2

 

 

 

 

 

 

 

 

 

2.7

 

εr

 

10.9

 

 

 

 

 

 

 

 

 

1

 

pec

 

2

 

 

 

 

 

 

 

15

13.9