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Abstract-Due to the micro-dimension of terahertz devices and antennas, it requires more stringent processing technology. Micro-Electro-Mechanical Systems (MEMS) used to fabricate terahertz functional devices and antennas is a good choice for the high accuracy, good consistence and low cost. In this paper, one approach to obtain antennas and passive devices in terahertz band is proposed, which based on electromagnetic crystal structure and MEMS technology. The band-pass filter, 90° bend waveguide and H-plane horn antenna operating at terahertz band are presented as examples. All of them have good agreement between simulation and measurement.

Terahertz Devices with EMXT Structure Fabricated by MEMS

Shengjie Yang1, Hongda Lu2, Zhipeng Liu1, Yong Liu1, Bin Li1, Xin Lv1

1Beijing Key Laboratory of Millimeter Wave and Terahertz Techniques, Beijing Institute of Technology, Beijing, 100081 China, 2Information Science Academy of China Electronics Technology Group Corporation, Beijing, 100086 China

To verify the advantages ofMEMS, we fabricated 90° bend waveguides, bandpass filter and H-plane horn antenna. The experimental results agree well with the simulation results.

II. RESEARCH ON TERAHERTZ PASSIVE DEVICE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A. 90°-bend waveguide

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Fig. 1 shows the proposed terahertz 90°-bend waveguide

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

with EMXT structure. Periodic square-shaped rodsa×(a×h)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

form this structure with the lattice constant P. The line defects

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

are

used to transmit

terahertz wave as waveguides

 

 

 

 

I.

INTRODUCTION

 

 

 

 

 

 

removing three rows of rods which also form a chamfered

Terahertz communication system integrates the

advantages

bend. The width of waveguide is 4P-a. The side view of this

90°-bend waveguide is shown in Fig. 1. The final optimized

of

microwave

communication

and

optical

communication,parameters are as follows: W = 1756 μm, H = 787 μm, a = 48

such as small size, high security, precise position, high speed

μm, h = 241 μm, P = 132 μm.

and large capacity for information [1]. Terahertz system has

 

 

 

broad application prospects in the future. As a part of terahertz

 

 

 

 

communication

system,

the

 

 

performance

 

of

 

terahertz

 

functional devices has an impact on the

performance

of

4P-a

 

terahertz system. Its development can not be ignored.

 

 

 

 

 

 

With

frequency

increasing,

 

terahertz

devices

have

a

 

 

minimum

size of less than 1

millimeter.

It’s

extremely

 

 

difficult to fabricate terahertz device with

conventional

 

 

technology,

considering

the

 

processing

error,

 

surface

 

roughness,

and

energy

loss.

 

Micro-Electro-Mechanical

 

W

Systems

(MEMS)

can

solve

thisproblem [2].

With

bulk

 

 

silicon MEMS technology, some cavities can be etched on the

 

 

 

(a)

 

 

 

 

silicon wafers. The surfaces of ilicons wafers are coated with

 

 

 

 

sputtering

gold. Silicon wafers

finally

are

connected

together

 

a

h

with gold-gold thermo-compression bonding

to

form

the

 

 

 

designed terahertz functional devices.

 

 

 

 

 

 

 

 

 

(b)

(c)

High precision and deep etching are typical advantages of

 

 

 

P

bulk

silicon

MEMS

technology to

fabricated

complex

H

structure like electromagnetic crystal (EMXT, also called

 

 

 

photonic crystals at optical frequency

 

)

[3].

 

For

the

 

electromagnetic band gaps of EMXTs, they can also be used

 

 

 

to transmit electromagnetic waves. These structures consist of

 

 

 

 

periodical metallic or dielectric cells which can

easily

form

 

 

(d)

passive terahertz devices, such as waveguides, filters and

 

 

antennas. The

EMXT size in

the

microwave

band

is on

the

Figure 1. Structure of proposed 90°-bend waveguide: (a) schematic diagram

order of centimeters and in the optical band is on the order of

 

(b) partial top view (c) partial side view (d) whole side view.

 

 

 

nanometers. It’s too large to integrate or too small to fabricate.

 

This waveguide operated from 0.365 THz to 0.578 THz

But

it’s

suitable

in

terahertz

band.

Bulk

silicon

MEMS

45.2% relative bandwidth. The cross section

technology provides such means for terahertz

circuit

and

with

corresponds to WR-1.9 standard rectangular waveguides. The

components fabrication.

 

 

 

 

 

 

 

 

 

 

 

S parameters of this 90°-bend waveguide is presented in Fig. 2.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

by

size

978-1-5386-2416-6/18/$31.00 ©2018 IEEE

0

The insertion loss is around 0.2 dB in the operating frequency band which is very close to 0 dB. And the return loss is lower than -10 dB from 0.36 THz to 0.57 THz. S21 converted into energy transfer rate is 90%. 90% energy has been transmitted from one port to the other port. The maximum transmittance

of the conventional 90°-bend

waveguide

without

EMXT

structure can only reach up to

80% by

contrast

[4]. This

structure of terahertz 90°-bend waveguide has the advantages of low energy loss and high transmission efficiency.

(dB)

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S-parameter

-5

 

 

 

Figure 4. Microscope image of proposed unbonded THz bandpass filter

 

 

 

 

 

 

-10

 

 

 

Comparison of measurement and simulation is presented in

 

 

 

 

 

 

 

 

 

 

Fig.

 

5.

The

3dB

bandwidth

is

30

GHz

and

the

center

Simulated

-15

 

 

 

 

 

 

 

frequency of filter is 427 GHz. The simulation results shows

 

 

 

 

 

 

-20

 

 

S11

1.3

dB insertion loss within the passband

and

return

loss

is

 

 

better

than 14

dB. In the measured results, 3dB bandwidth

 

 

S21

 

-25

 

 

 

reaches up to 32 GHz. The insertion loss and return loss reach

 

 

0.4

0.5

0.6

up

to

2

dB

and

24

dB

respectively.

S11

and

S21

show

 

0.3

expecting agreement between simulated and measured results.

 

 

 

Frequency (THz)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 2. Simulated S-parameters of designed THz 90°-bend waveguide

B.

Bandpass filter

 

 

 

 

 

 

 

 

 

 

 

 

(dB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Fig.3

and Fig.

4 present a

325~350

GHz

EMXT

formed

-20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

bandpass

filter

[5]

fabricated

by bulk

silicon

 

 

 

 

 

 

 

 

 

 

MEMS

 

 

 

 

 

 

 

 

 

technology.

Cylinder rods are arranged periodically

as

an

 

-40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

array. This bandpass filter is etched with deep reactive-ion

 

 

 

 

 

 

 

 

 

 

etching

on

the

silicon

wafers.

 

The

standard

thickness

of

 

 

 

 

 

 

 

 

 

chosen silicon wafers is 400μm. Etching depth is 280μm for

 

parameterS-

-60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S11-simulated

 

 

 

 

 

 

 

 

 

 

 

 

the

height

of

cylinder

rods.

Some

rods are

removed

and

-80

 

 

 

 

S11-measured

 

 

 

 

 

 

 

S21-simulated

 

 

 

rearranged to form the cavity resonators. Two independent

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S21-measured

 

 

 

TM110

modes

can

be

generated

 

in

these

cavities.

This

 

 

-100

 

 

 

 

 

 

 

 

resonator

offers

a steeper side band response.

WR-2.2

 

 

325 350 375 400 425 450 475 500

 

(560×280 μm)

standard

rectangular

waveguides

also

match

 

 

 

 

 

Frequency (GHz)

 

 

well

 

with

 

this

filter

for

the

EMXT

formed

standard

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

waveguides

design. Two filters have been fabricated. One

Figure 5. Measured and simulated results of proposed THz bandpass filter

filter is unbonded shown in Fig. 4. The other is bonded for test.

 

 

 

 

 

 

 

 

 

 

 

With

the

full-wave simulation software

high-frequencyC. H-plane horn antenna

 

 

structure simulator, the design parameters are optimized as

The center

frequency of this H-plane horn antenna is 0.5

follows: r = 24 μm, P = 140 μm, d = 980 μm, R = 410 μm, α1

THz,

which

can be used with the

proposed 90°-bend

= 120°, α2 = 60°, W1 = 310 μm, W2

= 410 μm, Lg

= 420 μm,

waveguide together [6]. Similarly, this EMXT structure is

Wg =560 μm, L = 2660 μm and W= 1960 μm.

 

 

 

 

consist of periodic square-shaped rods, some of which are

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

removed to form the gradually flared horn. Geometry of this

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H-plane

horn antenna is presented in Fig. 6. Logarithmic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

curved taper is adopted to get low sidelobes in the H-plane. W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

is

the

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

width of the waveguideL . is the length of the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

waveguide. L2 and D are the length and aperture of this horn

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

antenna. The crystal lattice constant and dimensions of rods

 

Figure 3. Side view of proposed unbonded THz bandpass filter

 

 

are the same as the proposed 90°-bend waveguide. The

 

 

 

parameters with optimization of HFSS are as

follows:W =

Applications. 2nd ed. New York, NY, USA: Wiley, 2003.
Wu, Z., Liang, M., Ng, W.-R., Gehm, M., and Xin, H.: ‘Terahertz horn antenna based on hollow-core electromagnetic crystal (EMXT) structure’, IEEE Trans. Antennas Propag., 2012, 60, (12), pp. 5557–
5563
Si Li-Ming, Liu Yong, Lu Hong-Da, Sun Hou-Jun, Lv Xin, Zhu Weiren. Experimental Realization of High Transmittance THz 90°-Bend Waveguide Using EMXT Structure[J]IEEE. Photonics Technology Letters, 2013, 25(5): 519-522.
Lu Hongda, Lv Xin, Wu Yuming, Si Liming, Liu Yong. Experimental realisation of micromachined terahertz electromagnetic crystal (EMXT) waveguide bandpass filter[J].Electronics Letters, 2014, 50(25): 19521953.
Liu Y., Si L. M., Zhu S. H., Xin H. Experimental realisation of integrated THz electromagnetic crystals (EMXT) H-plane horn antenna[J]. Electronics Letters, 2011, 47(2): 80.

483 μm, L2 = 3366 μm, D = 3348 μm, P = 132 μm, a = 48 μm, H = 241 μm.

D

L2

W

 

 

 

L1

 

 

 

(a)

P

a

H

 

 

 

III. CONCLUSION

Three kinds of terahertz device are fabricated with EMXT structures by bulk silicon MEMS technology and measured results showing expecting agreement with simulation. The fabricated 90°-bend waveguide shows 90% transmittance. The bandpass filter operates at a 426.5 GHz center frequency with 7.6% relative bandwidth. The insertion loss and return loss of

filter reach up to 2 dB

and 24

dB

respectively. Good

normalized radiation patterns of

H-plane

horn

antenna at the

main beam are also demonstrated. For the high accuracy and fabrication flexibility, MEMS provides a feasible way to processing terahertz device. EMXT structure or other novel structures can be good choices to form terahertz passive devices for processing convenience.

ACKNOWLEDGMENT

(b)

(c)

 

This work is supported by the Joint

Research

Fund in

Figure 6. Structure of proposed H-plane horn antenna: (a) schematic diagram

Astronomy (U1631123) under cooperative agreement between

(b) partial top view (c) partial side view.

the National Natural Science Foundation of China (NSFC) and

 

 

Fig. 7 shows the E-plane and H-plane radiation patterns of

Chinese Academy of Sciences (CAS).

 

 

this horn antenna. The 3dB beam width is 60° in the E-plane

 

REFERENCES

 

 

and 25° in the H-plane. The measured sidelobe in the H-plane

[1]

Christopher M. Snowden, "Prospects for

terahertz

technology",

is only -18.2dB. There is not clearly difference between the

 

Microwave and Millimetre-Wave Communications - the Wireless

curves of simulation and measurement at theta = 0°. The

Revolution IEE Workshop on, pp. 7/1-7/6, 29 Nov 1995.

 

 

measured results show good consistence with the simulation

[2] V. K. Varadan, K. J. Vinoy, and K. A. Jose, RF MEMS and Their

results. Normalized radiation pattern in the main beam (3dB

[3]

 

 

 

beam width) shows little change between simulation and

 

 

 

measurement. It demonstrates the superior performance of

 

 

 

 

MEMS to fabricate the EMXT formed horn and waveguide.

[4]

 

 

 

Normalized radiation pattern (dB)

0

-10

-20

 

 

 

 

 

 

 

 

 

simulated E-plane

 

 

 

 

 

measured E-plane

 

 

-30

 

 

simulated H-plane

 

 

 

 

 

measured H-plane

 

 

-90

-60

-30

0

30

60

90

Theta (deg)

[5]

[6]

Figure 7. Measured and simulated radiation pattern of proposed THz H-plane horn antenna.