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Dual-Band Dual-Polarized SIW Filtering Antenna

Manisha Kahar, Mrinal Kanti Mandal

Department of Electronics & Electrical Communication Engineering

Indian Institute of Technology Kharagpur

Kharagpur, India manishakahar@gmail.com, mkmandal@ieee.org

Abstract—This paper presents a dual-band dual-polarized filtering antenna in SIW technology. An annular ring slot is etched on top of a SIW cavity for radiation. A vertical corner pin is introduced inside the cavity to control coupling between the first two higher order modes, TE210 and TE120. The coupling controls the radiation frequencies. The antenna provides orthogonal linear polarization at the two frequencies. A prototype filtering antenna is fabricated for radiation at 10.47 GHz and 11.87 GHz with 10 dB input matching bandwidth of 1%. Measured peak gain is at least 6.8 dBi for both the pass bands with 0.1 dB variation over the entire passband.

Keywords—dual-band, dual mode, dual-polarized, filtering antenna.

I. INTRODUCTION

Polarization-diversity antennas are widely used in multipleinput multiple-output and cognitive radio systems. Dual-band characteristic adds one more degree of freedom enabling better antenna functionality. Dual-band dual-polarization in low profile antennas like the microstrip patch, planar slot or slotted substrate integrated waveguide (SIW) antenna is achieved mostly by dual feeds to two resonators or switchable slot techniques [1]–[2]. While dual feeds require more components, switches restrict the antenna performance by their insertion losses. Single feed antennas attaining dual-band dualpolarization are reported with composite right-/left-handed or artificial magnetic conductor structures [3]. However, these antennas inherently require more vertical layers and are difficult for system integration. Dual-mode antennas are also designed in SIW technology [4]–[5]. All of the above antennas do not show filtering characteristics.

In this paper, a simple SIW configuration is presented to design a dual-band dual-polarized antenna with a single microstrip feed with filtering characteristics, first time to the best of authors’ knowledge. Radiation is obtained from an annular ring slot on top of the SIW cavity. Dual-band characteristics is obtained by inter modal coupling between two higher order modes. Further, a technique is presented to control the bandwidth of each operating band like a bandpass filter. All simulations presented throughout the paper have been carried out using ANSYS HFSS.

II. DESIGN AND ANALYSIS

Fig. 1 shows the configuration and photograph of the fabricated antenna. Electroplating on dielectric is done to realize metallic side walls of the SIW. A square SIW cavity is connected with a 50 Ωmicrostrip line. A square cavity is used as it supports two orthogonal degenerate modes. The substrate used for the cavity is 31 mil thick RT/duroid 5880 substrate with εr = 2.2, and

Metal pin

p

W

 

 

 

feed

l

 

r1

 

s

 

 

r2

 

Z

 

 

 

 

 

 

 

 

 

X

φ

Y

(a)

 

 

 

(b)

Fig. 1. (a) Configuration of the SIW filtering antenna (dimensions: s = 0.2, p = 4, W = 20, r1 = 2, r2 = 4.5, l = 1.6 unit: mm) and (b) a photograph of the fabricated prototype.

 

0

 

 

 

 

(dB)

-10

 

 

 

 

|

 

 

 

 

 

11

 

 

 

 

 

|S

-20

 

 

 

 

 

 

 

 

 

(a)

8

9

10

11

12

 

Frequency (GHz)

 

 

1.15

 

 

210

1.1

 

 

 

 

 

f

 

 

 

/

 

 

 

120

1.05

 

 

f

 

 

 

(b)

13.5

5 p (mm) 6.5

8

 

 

 

Fig. 2. Variation of |S11| with (a) cavity size W (solid line: W = 20 without pin, dashed line: W = 20 with pin, dashed dot line: W = 20.8 with pin, unit: mm) and

(b) offset p.

tanδ = 0.0002. An annular ring slot of inner and outer radii of r1 and r2, respectively, is etched on the top wall for radiation.

Any two orthogonal degenerate resonant modes like TEmn0

and TEpq0 of a SIW resonator for a given width W and length L of a dual-mode cavity are related as

m 2

n 2

 

p 2

q 2

, m n and p q .

(1)

 

 

 

 

 

 

 

 

 

 

 

W

W

L

 

 

 

L

 

 

 

 

 

 

The modes TEmn0 and TEpq0 are orthogonal to each other and hence intermodal coupling does not exist. Coupling between the

modes is obtained by introducing some sort of geometrical perturbation such as metallic via, corner cut, slot on top plane etc. Here, a vertical corner metallic pin at diagonal offset p from the center is used for the perturbation. The degenerate modes used here are the first higher order modes next to the fundamental mode. This mode has a major advantage over the fundamental mode in terms of less conductor loss due to evenly distributed current density [5].

Perturbation results in mode splitting. Fig. 2(a) shows the variation of |S11| with and without the metal pin. The first dip is

due to the fundamental TE110 mode. The second dip is due to the TE210/TE120 mode, which splits into two modes when the metal

pin is introduced. Since higher order mode is being used, it is observed that the pin with diameter 0.8 mm at p = 4 mm decreases the inductance of the equivalent parallel resonator. Therefore, the cavity size should be readjusted to bring back the

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331

AP-S 2019

 

f210 mode

E Field

f120 mode

 

 

V/m

 

 

 

2.3e4

 

 

 

1.7e4

 

 

 

1.1e4

 

 

 

5.9e3

 

(a)

10.47 GHz

1e-2

11.87 GHz

 

E Field

 

 

 

 

 

 

V/m

 

 

 

1.3e4

 

 

 

4.7e3

 

 

 

1.6e3

 

 

 

5.7e2

 

(b)

10.47 GHz

2.1e1

11.87 GHz

 

 

 

Fig. 3. Time averaged electric field distributions (a) inside the cavity, and (b) on the slot plane.

 

0

 

 

 

 

0

 

 

 

l =

 

 

 

 

 

 

| (dB)

-10

 

 

 

 

(dB)

-10

l =

 

 

f210

 

1

f120

1

 

 

 

1.3

 

 

 

 

|

 

 

 

 

11

-20

 

 

 

1.6

 

11

-20

 

1.3

 

 

 

 

 

 

 

 

 

 

1.9

 

|S

 

1.6

 

|S

 

 

 

 

 

 

 

 

 

 

-30

 

1.6 (measured)

 

 

-30

 

1.9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

10.5

11

11.5

12

 

10.2

 

10.4

10.6

 

 

 

 

 

 

Frequency (GHz)

(a)

 

Frequency (GHz)

(b)

 

 

 

 

 

 

 

 

 

 

 

 

Fig. 4. Variation of |S11| with feed inset depth l for p = 4 mm, (a) f210 mode and

(b) both the modes.

gain

 

5

 

 

l =

 

 

0

 

 

1

 

(dBi)

 

 

1.3

 

Realized

 

 

 

-5

 

 

 

 

 

 

1.6

 

1.9

 

10.5

11

11.5

12

 

-10

(a)

 

 

Frequency (GHz)

 

 

 

 

 

 

gain

 

6

 

l =

 

 

 

4

 

1

 

(dBi)

 

 

 

2

 

 

1.3

 

Realized

 

 

 

0

 

 

1.6

 

 

 

1.9

 

10.3

10.4

10.5

10.6

 

 

(b)

 

Frequency (GHz)

 

 

 

 

 

 

Fig. 5. (a) Realized gain variation with l for p = 4 mm and for θ=0°, φ=0°, (b) The expanded view for f210 band.

resonant frequency. Here, a cavity with pin and W = 20.8 mm is equivalent to a cavity without pin with W = 20 mm. The offset p controls the coupling between the TE210/TE120 modes and hence the separation between f210 and f120. Fig. 2(b) shows the variation of f120/f210 with p. Maximum separation between the two bands is achieved for p = 3.5 mm.

Fig. 3 shows the electric field distributions at the two resonant frequencies. The electric field inside the cavity is mostly Z-directed as shown in Fig. 3(a). Fig. 3(b) shows the time averaged electric field distributions on slot plane. It shows that

the mode with f210 = 10.47 GHz is due to odd-mode resonance since the corner pin is at null and an electric wall can be placed

along the diagonal of the cavity passing through the pin. Therefore, f210 is not affected by p. Similarly, f120 = 11.87 GHz is due to even-mode resonance since a magnetic wall can be placed along the same diagonal plane. Therefore, f120 is

controllable by p. At the odd-mode frequency f210, ZX-plane is the E-plane as the electric field variation is along X-axis on the

slot plane. Similarly, for the even mode frequency f120, YZ-plane is the E-plane.

(dBi)

10

Co-pol

 

 

 

0

 

 

 

 

 

 

 

gain

-10

Cross-pol

 

 

 

Realized

-20

 

 

 

 

-30

line: sim, symbol: meas

 

-180

-90

0

90

180

 

(a)

 

Theta (degree)

 

 

 

 

 

 

(dBi)

10

 

 

Co-pol

 

0

 

 

 

 

 

 

 

gain

-10

 

 

 

 

-20

 

Cross-pol

 

Realized

 

 

-30

line: sim, symbol: meas

 

-40

 

-90

0

90

180

 

-180

(b)

Theta (degree)

 

 

 

 

 

Fig. 6. Simulated and measured realized gain patterns at (a) 10.47 GHz on ZX- plane (E-plane) and YZ-plane (H-plane) and (b) 11.87 GHz on YZ-plane (E- plane) and ZX-plane (H-plane) (solid line, circle: E-plane, dashed line,star: H- plane).

External quality factor Qext determines the input matching bandwidth and is controlled by the feed inset depth l. The plot

of |S11| for f210 mode in Fig. 4(a) shows that l can be used to control the 10 dB input impedance matching bandwidth. The

optimum feed offset l is first determined for best impedance matching at the design frequencies. Any deviation from the optimum l value increases the Qext and hence decreases the effective bandwidth of the antenna. Next, keeping the bandwidth fixed, matching can be further improved, if required, by varying s. Fig. 4(b) shows that almost equal matching is obtained for both the modes for l = 1.6 mm and s = 0.2 mm. Measured |S11| is also shown in Fig. 4(b). Claim of bandwidth control is also supported by the plots of realized gains shown in Fig. 5(a). The expanded view for f210 band is shown in Fig. 5(b) for clarity. Pass bands are centered at 10.47 GHz and 11.87 GHz.

III. RESULTS AND DISCUSSION

Simulated and measured radiation patterns of co-pol and cross pol on ZX and YZ-planes are shown in Fig. 6(a) and Fig. 6(b) at 10.47 GHz and 11.87 GHz, respectively. The antenna is theta polarized on XZ-plane at 10.47 GHz and phi polarized at 11.87 GHz. The antenna is thus capable of radiating in dualband with dual-polarization.

IV. CONCLUSION

A dual-band dual-polarized filtering antenna has been designed using the concept of first higher order degenerate mode splitting and a technique is described to control the bandwidths. Therefore, the antenna does not require external bandpass filter, thus, reducing the system cost and volume. The high selectivity of the filtering antenna makes it suitable for several narrow band secure antenna applications.

REFERENCES

[1]Y. Wang and Z. Du, “Dual-polarized dual-band microstrip antenna with similar-shaped radiation pattern,” IEEE Trans. Antennas Propag., vol. 63, no. 12, pp. 5923-5928, Dec. 2015.

[2]H. Lee, Y. Sung, C. M. Wu and T. Itoh, “Dual-band and polarizationflexible cavity antenna based on substrate integrated waveguide,” IEEE Ant. Wireless Propag. Lett., vol. 15, pp. 488-491, 2016.

[3]J. Lin, Z. Qian, W. Cao, S. Shi, Q. Wang and W. Zhong, “A low-profile dual-band dual-mode and dual-polarized antenna based on amc,” IEEE Ant. Wireless Propag. Lett., vol. 16, pp. 2473-2476, 2017.

[4]C.Y Chang and W. C C Hsu, “Novel planar, square-shaped, dielectricwaveguide, single-, and dual-mode filters,” IEEE Trans. Microw. Theory Techn., vol. 50, no. 11, pp. 2527-2536, Nov. 2002.

[5]A. A. Khan and M. K. Mandal, “Compact self-diplexing antenna using dual mode SIW square cavity,” IEEE Ant. Wireless Propag. Lett., vol. 18, no. 2, pp. 343-347, Feb. 2019.

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